英语释义

1. the difference in energy between the valence band and the conduction band of a solid material (such as an insulator or semiconductor) that consists of the range of energy values forbidden to electrons in the material

片语

bandgap offset对不同能带补偿

bandgap bowing型能隙

Direct bandgap直接能隙

photonic bandgap光子带隙

optical bandgap光学带隙

Bandgap References参考电路

energy bandgap能带间隙

small bandgap窄能隙

bandgap reference带隙基準

英汉例句

• the voltage reference generator was the expansion of the bandgap circuit for saving the resources.

  基準电压产生电路为带隙电路的扩展，节省了资源并得到了高稳定度的基準电压。

• a bandgap voltage reference circuit with good stability and high accuracy is designed in this pa- per.

  设计了一种具有良好稳定性和高精度的带隙基準电压源电路。

• a low power cmos bandgap voltage reference source with a start-up circuit is presented based on the bandgap voltage theory.

  运用带隙基準的原理，提出了一种带启动电路的低功耗带隙基準电压源电路。

• leading into the complex refractive index and making use of the characteristic matrix method, the photonic bandgap of photonic crystal with the variety of the absorb is studied.

  引入复折射率并利用特征矩阵法，研究了光子晶体的吸收对光子晶体能带的影响。

• design a bandgap voltage reference circuit and a voltage-modifying circuit to provide precise voltage and current reference for the referred adc.

  设计了基準电压源和电压微调电路，为adc提供参考电压和电流，而且能进行一定范围内的微调。

• both the optical absorption coefficient and bandgap decrease with increasing in film thickness.

  光吸收系数以及禁带宽度均随薄膜厚度的增加而下降。

• besides, the self-stability of the bandgap voltage reference structure makes the uvlo can work stably.

  而且带隙基準电压源结构自身的稳定性决定了欠压封锁能够稳定工作。

• low power, low voltage and high psrr are the main challenges in designing bandgap reference for switching regulator.

  微功耗、低工作电压、高电源抑制比是在电源芯片中的基準源设计过程中遇到的主要挑战。

• a thick film has a red shift of direct transition bandgap than thin films due to the strong interface interaction.

  由于厚膜中存在较强的表面相互作用，厚膜的直接跃迁禁带宽与薄膜相比发生了红移。

• if the photon energy is greater than the bandgap of the cell material, then electrons are excited into the conduction band.

  如果光子的能量高于电池材料的能带，那么电子就被激发到导带中。

• therefore, we get the bandgap reference voltage with very small temperature coefficient.

  由此得到温度系数很小的带隙基準电压。

• the company's next program builds on the success of another darpa initiative involving gan technology -- the wide bandgap semiconductors for rf application (wbgs-rf) program.

  该公司的next项目是基于darpa的另一项gan技术的成功，即宽禁带半导体射频应用（wbgs-rf）项目。

• it uses the traditional principle of bandgap reference together with the self-bias structure and startup circuit to get the stable voltage output and good temperature coefficient.

  它利用带隙基準的基本原理，结合自偏置结构以及适当的启动电路，获得了相对稳定的电压值以及较好的温度系数。

• dgs are widely applied to rf and microwave circuits to improve the performance because of its bandgap characteristic.

  缺陷接地结构由于其带阻特性而被广泛地应用到射频微波电路中，以改善电路性能。

• bandgap reference source is an important unit in integrated circuits, which supplied reference voltage or current independent of temperature and supply voltage.

  带隙基準源是集成电路中的重要单元，输出不随温度、电源电压变化的基準电压或电流。

• such a bandgap is essential for electronics applications because it allows a material to switch the flow of electrons on and off.

  而带隙是电学应用的关键，因为它能使材料实现电子流的开与关。

• one way of introducing a bandgap into graphene is to make extremely narrow ribbons of the material.

  给石墨烯引入带隙的方法之一是制作极窄的石墨烯带。

• starting from analyzing the general principle of typical bandgap reference circuit, the design of a cmos bandgap reference circuit with adjustable output is discussed.

  从分析典型的能隙基準电路的一般原理入手，重点讨论了一种输出可调节的cmos能隙基準电路的设计。