片语

bipolar power transistor physics[电子]

Bipolar Juction Transistor双极型晶体管

bipolar power transistor双极功率晶体管

BJT Bipolar Junction Transistor双极交叉口晶体管

bipolar r transistor双极性晶体管

microwave bipolar power transistor微波功率晶体管

Silicon bipolar junction transistor硅双极型晶体管

bipolar junction transistor双极面结型晶体管

Bipolar Junction Transistor BJT双极结型晶体管

英汉例句

• the method for manufacturing the bipolar transistor comprises the following steps of: forming an active region on a semiconductor substrate;

  其中，双极晶体管的制造方法包括步骤：在半导体衬底上形成有源区；

• a new network model for the complementary lateral insulated-gate bipolar transistor cligbt is presented in this paper.

  本文提出互补横向绝缘栅双极晶体管cligbt的一种网络模型。

• a high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in cmos technology.

  利用cmos工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。

• an improved plan of silicon controlled rectifier(scr)line type trigger is described in detail. anew practical circuit of bipolar transistor trigger for high pulse repeat frequency is presented.

  详细地介绍了可控硅整流器（scr）线型触发器的改进型设计方案，提出了用于高脉沖重复频率的双极晶体管触发器的实用新电路。

• the paper analyses the electric circuit and the working principle of the avalanche of the bipolar transistor of the pulser with a cascade connected bipolar transistor structure.

  讨论了采用级联双极性晶体管结构的超宽带极脉沖发生器，并对其电路及双极性晶体管雪崩的工作原理进行了具体分析。

• the system adopted insulated gate bipolar transistor (igbt) as its main circuit and pulse-width modulating (pwm) technology.

  该系统采用igbt（绝缘栅双极型晶体管）器件，pwm（脉宽调制）控制技术。

• as a result, output character of pnp bipolar transistor is barely satisfying.

  这些原因导致了pnp双极晶体管的输出性能差强人意。

• the inverter can be manufactured with the insulation gate bipolar transistor module.

  逆变器采用绝缘栅双极晶体管模块制造。

• in the brushless model, the igbt ( isolated gate bipolar transistor ) switch state period table is gained by gal ( generic array logic ) which analyzes the signal of position feed-back.

  在无刷直流方式下，用gal对位置反馈信号进行逻辑综合，得到开关管的导通规律。

• pulse width modulated (pwm) inverter can generate common-mode voltage, which can produce charge-discharge current at the distant of every insulated gate bipolar transistor (igbt) high-speed switching.

  pwm逆变器在应用中会产生共模电压， 共模电压在igbt的高速开关期间产生充放电电流。

• a design of boost converter using high-power insulated bipolar transistor igbt module named skm75gal123d and driver module named exb840 is introduced.

  介绍了一种用大功率绝缘栅极双极型晶体管（igbt）模块skm75gal123d和驱动模块exb840设计的直流升压斩波器。

• the circuit is constructed by a operational amplifier and bipolar transistor current mirrors with multiple outputs.

  该电路由一集成运算放大器及多端输出的双极晶体管电流镜构成。

• a class e amplifier can be constructed using either bipolar transistor or mems switch.

  分析一种基于e类放大器新型逆变拓扑结构，并且详细分析了该电路的特征。

• using both pure poly emitter and heavily doped base, a cmos-compatible silicon bipolar transistor is implemented, which has low base resistance and is suitable for low temperature operation.

  采用多晶硅发射区和基区重掺杂技术，获得了可与cmos结构兼容，基区电阻较小的硅低温双极晶体管。

• the main structure and key performance parameters of the bipolar transistor were studied and designed, it was taped out and tested.

  对双极晶体管结构和关键性能参数进行了研究和设计，并进行了流片测试。

• t equivalent high frequency heterojunction bipolar transistor (hbt) noise model is reported.

  提出了一个t等效异质结双极晶体管高频噪声电路模型。

• the paper expounds mos system power element「s characters, insulated gate bipolar transistor and integration type power element」s technology and its applications.

  本文阐述了mos系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。