英语释义

1. a technique for depositing a usually thin solid layer of a substance on a surface as the result of vapor-phase chemical reactions in a high temperature gas in close proximity to the surface — compare atomic layer deposition

片语

chemical liquid vapor deposition化学液气相沉积

chemical l vapor deposition reactor化学汽相淀积反应器

chemical vapor deposition reactor化学汽相淀积反应器

chemical l vapor deposition化学蒸镀

pressure chemical vapor deposition高压化学汽相沉积

metallorganic chemical vapor deposition金属有机化合物汽相淀积

chemical l vapor deposition film化学汽相淀积膜

Catalytic chemical vapor deposition催化化学气相沉积

modified chemical vapor deposition改进的化学汽相淀积

英汉例句

• diamond film was coated by the hot filament chemical vapor deposition method.

  在热丝化学气相沉积装置中，制备金刚石薄膜。

• hot filament chemical vapor deposition is one of the developed ways to deposit the diamond at present.

  热丝法化学气相沉积金刚石膜是目前已经发展成沉积金刚成熟的方法之一。

• since no company has perfected the chemical vapor deposition process, applied materials is testing out their process using a variety of methods and materials.

  因为没有一个公司能使化学气相沉积过程完美应用，amat在尝试他们自己的流程，使用各种方法和材料。

• may 5, 2008...bcc research has released a report about the markets for chemical vapor deposition (cvd), ion implantation, and molecular beam epitaxy (mbe).

  bcc研究公司发布的报告预测了化学气相沉积(cvd)、离子注入和分子束外延系统(mbe)的未来市场。

• ultra-high vacuum chemical vapor deposition (uhvcvd) was a good choice, it provided a super clean, low temperature, low pressure ambient, and controlled thin films' growth precisely.

  超高真空化学气相沉积（uhvcvd）具有超凈的生长环境、能够在低温、低压下生长锗硅材料，可精确控制薄膜生长等优点。

• a novel passivation technology of porous silicon (ps) surface, i. e. , depositing diamond film on the ps surface by microwave plasma assisted chemical vapor deposition (mpcvd) method, was developed.

  提出了一种新颖的多孔硅表面钝化技术，即采用微波等离子体辅助的化学气相沉积（mpcvd）方法在多孔硅上沉积金刚石薄膜。

• in present work, (100) oriented cvd diamond films with different quality obtained by a hot-filament chemical vapor deposition (hfcvd) technique were used to fabricate radiation detectors.

  本工作利用热丝化学气相沉积（hfcvd）法获得了（100）取向不同质量的金刚石薄膜，并制备了cvd金刚石辐射探测器。

• in order to modify the surface properties of the particles, composite particles are prepared by the process of chemical vapor deposition (cvd) in a fluidized bed reactor.

  为了对颗粒表面进行改性，在自行设计组装的流化床反应器中，利用化学气相沉积法（cvd）制备了不同的复合颗粒。

• large current hot cathode glow discharge was used for plasma chemical vapor deposition of diamond films. it improved deposition rate and films quality efficiently.

  大电流热阴极辉光放电用于等离子体化学气相沉积金刚石膜，有效地提高了沉积速率和膜品质。

• a series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (vhf-pecvd) at different silane concentrations in a p chamber.

  在掺杂p室采用甚高频等离子体增强化学气相沉积（vhf-pecvd）技术，制备了不同硅烷浓度条件下的本征微晶硅薄膜。

• the relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow discharge plasma chemical vapor deposition process was discussed.

  研究了在热阴极辉光放电等离子体化学气相沉积金刚石膜过程中，热阴极辉光放电特性与金刚石膜沉积工艺的关系。

• this article introduces processing of plasma chemistry and application of sputter coating and plasma-enhanced chemical vapor deposition in powder metallurgy especially.

  介绍了等离子体化学工艺，特别着重介绍了溅射镀膜与等离子体化学气相沉积在粉末冶金中的应用。

• the carbon nanotubes were synthesized by the heat filament chemical vapor deposition (cvd).

  实验中所用碳纳米管由化学气相沉积法（cvd）合成。

• according to the report, the global market for chemical vapor deposition (cvd) will increase from ＄7.0 billion in 2007 to an estimated ＄7.3 billion by the end of 2008.

  报告称，cvd全球市场将从2007年的70亿美元提高到2008年的73亿美元，到2013年cvd市场有望达到118亿美元，平均年复合增长率(cagr)为10.2%。

• direct current hot cathode plasma glow discharge chemical vapor deposition (dc-hcpcvd) is a new method to deposit high quality diamond films with high growth rate.

  直流热阴极辉光放电等离子体化学气相沉积法是我们建立的快速沉积高品质金刚石膜的新方法。

• nano-sized silicon films with large area were prepared by normal low pressure chemical vapor deposition method.

  利用普通低压化学气相沉积技术在玻璃衬底上制备了大面积的纳米硅薄膜。

• polysilicon thin films are deposited by catalytic chemical vapor deposition method. the substrate temperature is 300 ℃ and catalytic hot wire is tungsten filament.

  以金属钨为催化热丝，采用热丝催化化学气相沉积，在300℃的玻璃衬底上沉积多晶硅薄膜。

• the article has introduced the application and development tendency of techniques of film making with chemical vapor deposition in all fields.

  本文介绍了化学气相沉积制膜技术在国民经济各个领域中的应用及其发展趋势。