CMOS
abbr. 互补金属氧化物半导体(Complementary Metal-Oxide-Semiconductor Transistor)
2025-09-06 19:19 浏览次数 7
abbr. 互补金属氧化物半导体(Complementary Metal-Oxide-Semiconductor Transistor)
1. complementary metal-oxide semiconductor
CMOS电路current-mode CMOS circuits
cmos structure互补金氧半导体结构
CCD CMOS传感器
CMOS Setupcmos设置
TTC CMOS实用数字电路手册
CMOS CMOS传感器类型
CMOS processcmos工艺
CMOS APS有源像素图像传感器
Furthermore, CMOS MOCCII circuit with simple structure has been configured using basic current mirror technique. Both proposed MOCCII filters have been verified by PSPICE simulation.
同时应用基本电流镜技术实现出结构简单的高精度CMOSMOCCII,并对MOCCII及提出的滤波器电路进行了PSPICE仿真。
This circuit structure is simple and can be realized by the standard CMOS process easily.
该电路结构简单,易于实现,且制作工艺与标準CMOS工艺完全兼容。
Though CMOS imaging technology is making inroads in consumer technology, there’s 「still nothing like a huge CCD,」 Tyson said, for high-end science.
Tyson认为:尽管CMOS成像技术正在走入消费电子,但是对于高端科学领域而言,「还没有东西比得上巨型CCD」。
Fabricated with 90-nanometer low-power CMOS technology, the 32-bit PowerPC e300-based multimedia SoC is clockable up to 400MHz.
这个基于PowerPCe300的32位多媒体SoC采用90纳米的低功耗CMOS技术制程,时钟频率400MHz。
Let's look first at the physical size of CCD or CMOS sensor used to capture your photographs.
首先我们来看看CCD或是CMOS的物理尺寸吧。
But there are a lot of smart people at Intel and they were able to reinvent the CMOS transistor using new materials.
不过,英特尔公司拥有大量聪明人,他们有能力发明使用新材料的单极型晶体管”。
The symmetric ternary current-mode CMOS circuits designed by using this theory not only have simpler circuit structures and correct logic functions, but also can process two-way signal.
应用该理论设计的对称三值电流型CMOS电路不仅具有简单的电路结构和正确的逻辑功能,而且能处理具有双向特性的信号。
This is an electronic book is on CMOS VLSI design principles and systems prospects, and I hope to have your help!
这是一本电子书,是关于CMOSVLSI设计原理和系统展望的,希望对您有所帮助!
A methodology to synthesise continous-time current-mode filters using CMOS OTAs is presented.
本文提出了利用CMOSOTA综合连续时间电流模式滤波器的方法。
Due to the diversity of the faults and manufacturing defects in CMOS IC, some of the faults can neither be defected by voltage test nor by IDDQ test.
由于CMOS集成电路中的故障和制造缺陷是多种多样的,其中有些故障既不能被电压测试也不能被稳态电流测试方法检测出来。
Guided by the switch signal-theory, how to realize the threshold controlling in current-mode CMOS circuits is studied.
以开关信号理论为指导,对电流型CMOS电路中如何实现阈值控制进行了研究。
It has been demonstrated that compared to simulator-based method, manufacturable deep sub-micron CMOS analog circuits can be synthesized using this system in a short run time.
大量的实验结果表明:与基于模拟器的方法相比,采用该系统可以快速综合出可制造的深亚微米cmos模拟单元电路。
Integrated absolute capacitive pressure sensors, coping with disadvantages of traditional sensors and being applicable of batch-processing, are novel sensors based on CMOS IC Technology.
CMOS集成电容绝对压力传感器是基于集成电路主流工艺集成的新型传感器,克服了传统传感器的缺点并利于批量生产。
By analyzing the design idea of binary CMOS Schmitt circuits firstly, this paper indicates that the key of the design of Schmitt circuits is threshold controlling circuits.
首先对二值CMOS施密特电路的设计思想进行了分析,指出设计施密特电路的关键为阈值控制电路。
In the digital image performance testing system of CMOS camera, defect detection is crucial.
在CMOS摄像头数字图像性能检测系统中,疵点检测是关键内容。
As a result, the new CMOS sensor makes possible a maximum output speed of approximately 9.5 frames per second, supporting the continuous shooting of ultra-high-resolution images.
每秒输出速度最高可达到约9.5帧,即便使用超高精细画质也能连续拍摄。
This paper discusses the processing circuit and features of the CMOS miniature camera used as a graphic sensor in the real time photoelectric displacement measurement.
本文将讨论微型CMOS电视摄像机作为图像传感器在实时光电位移测量时的处理电路及性能分析。
These capabilities are not available in standard CMOS and provide a dramatic improvement in performance over traditional sub-volt design approaches.
这些功能在标準CMOS里不可使用,显着改善了传统亚伏设计方法。
The novel design of the Flexfet transistor brings many benefits not realized in standard CMOS processes, which enable sub-volt designs and supports continued voltage scaling.
该Flexfet晶体管设计新颖,可以改善标準CMOS工艺中的分伏设计和电压调节等。
Through theoretical analysis, experiments and comparison with traditional CMOS gates, it is considered that either of the two practical circuits for ULG.
通过对电路的理论分析和实验测试,并与传统的CMOS与非门比较,认为该两种ULG。
In general, though, a CMOS sensor requires less exposure masks than a CCD.
一般而言,尽管CMOS传感器比CCD传感器需要更少的曝光罩。
This paper proposes a defect detection of CMOS camera based on local entropy.
基于局部熵,提出了基于局部熵的CMOS摄像头疵点检测方法。
Based on the above discussion, the half pixel offset staggered imaging principle that can be used in CMOS image sensors is presented.
在上述讨论的基础上,本文提出了CMOS图像传感器的半像素错位成像原理。
It combines the RF, mixed-signal, and digital capabilities of any other CMOS process, yet is inherently rad-hard making it an ideal process for demanding space applications.
该技术将射频、混合信号和具有数字能力的任何其他CMOS工艺相混合,同时其固有的抗辐照能力,这使其成为空间应用场合的理想工艺。
At present, leading-edge chip makers are using conventional bulk CMOS and planar transistor structures for the 32-/28-nm nodes.
目前制造晶体管的主流技术是采用体硅技术制作的32/28nm制程平面型晶体管。
The inductor and capacitor in CMOS process is an important issue in designing LNA and VCO.
CMOS工艺的电容和电感是设计lna、VCO等射频电路需要考虑的重要问题。
A sensitive, stable and low power consumption magnetic sensor is constructed using a CMOS multivibrator circuit, in which a sharp pulse train current is applied to the treated amorphous ribbon.
同时利用CMOS多谐振蕩电路产生窄脉沖电流序列对前面处理过的非晶带进行激励,制作成灵敏度高、稳定性好、功耗低的弱磁场传感器。