英汉例句

• The high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.

  通过控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。

• The output power and drain current increase as the gate voltage increases.

  输出功率和漏电流增加的栅极电压的增加。

• The acoustoelectric current also reveals Coulomb Blockade as a function of split gate voltage when microwave signal with the resonance frequency is coupled to DDT.

  给叉指换能器耦合共振工作频率微波后，我们观察到声电电流随分裂栅电压的变化同样出现库侖阻塞。

• Field emission currents were calculated for different apex radii at the gate voltage of 100v, and the results indicated that the field emission largely depends on the apex radius.

  计算了在100V门电压下不同顶端半径的场致发射电流。结果显示，场发射对顶端半径有很强的依赖性。

• For a given gate voltage and a higer perpendicular magnetic field, the conductance and the oscillations amplitude induced by spin-obit coupling are increased.

  磁场越大同一门电压下电导增加的振幅越大，自旋轨道耦合引起的震蕩变的越强，并使探针对电导的影响减小。

• With a gate voltage around 2.5v (minimum), output power and drain current increases substantially.

  随着周围2.5V的栅极电压(最低)，输出功率和漏电流增加了很多。

• A series resistance not only decreases field-effect mobility but also reduces the gate voltage corresponding to the peak field-effect mobility.

  串联电阻不仅会使迁移率降低，还会使峰值场效应迁移率所对应的栅压减小。

• The same time capacitor C3 is disconnected from the ground so that the load voltage ripple on capacitor C4 does not influence the gate voltage of IGBT Q2.

  同时断开电容器C3与地的连接，由此电容器C4上的负载电压波动不会影响IGBTQ2的栅极电压。

• It is showed that the varying gate voltage will change the nonlinear transconductance to get mixer function.

  分析了栅压对改变非线性跨导在混频器中的作用。

• Over-current protection circuits convert the detecting current into the gate voltage which controls the switch FET.

  过流保护电路将检测电流转化为栅压控制开关管；

• Luminescence intensity increased, but the role of the gate voltage to control current is not ideal.

  器件的发光强度有所提高，但栅压对载流子的控制作用不理想。