the subject of the invention is to raise the two-dimensional electron density and electron mobility of high electron mobility transistor of gallium nitride without generating short channelling effect.
其课题在于,针对氮化镓系的高电子迁移率晶体管,提高二维电子浓度和电子迁移率,并且不产生短沟道效应。
double crystal x ray rocking curve showed good crystal quality of pseudomorphic high electron mobility transistor (phemt) structure grown on it.