secondly, the transient characteristics of fn tunneling and hot hole (hh) stress induced leakage current (silc) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次,本文分别研究了fn隧穿应力和热空穴(hh)应力导致的超薄栅氧化层漏电流瞬态特性。
under both stress conditions stress induced leakage current follows a power law against stress time with different power factors.
在这两种应力条件下,应力导致的漏电流与时间的关系均服从幂函数关系,但是二者的幂指数不同。
fn tunneling and hot hole (hh) stress induced leakage current (silc) transient characteristics in thin gate oxide are investigated.
分别研究了fn隧穿应力和热空穴(hh)应力导致的薄栅氧化层漏电流瞬态特性。