the activation energy distribution during 25,100 ℃ isothermal annealing and 25-250 ℃ isochronal annealing for post-irradiation cmos devices were calculated by annealing model.
根据退火模型计算了cmos器件辐照后25、100℃等温和25~250℃等时退火过程中激发能的分布。
the structure of cyclic annealing and isothermal annealing has a little difference, but carbides average size of cyclic annealing is greater than that of isothermal annealing.
循环退火后的组织与等温退火的差异很小,但其碳化物的平均尺寸要大于等温退火。
the improvement of the conventional isothermal annealing was also explored in this article.
文章对传统等温球化退火工艺进行了改进。