英语释义

1. a change in electrical resistance due to the presence of a magnetic field

片语

Giant Magnetoresistance巨磁电阻

magnetoresistance head[电子]

tunnelling magnetoresistance隧穿磁电阻

reluctance[电磁] 磁阻；勉强；不情愿

magnetoresistance effect[电子]

magnetoresistance detector磁阻检测器

anisotropic magnetoresistance元件

gin magnetoresistance从科学发现到向商品应用快速转换的最新的实例就是巨磁电阻

magnetic resistance[电磁] 磁阻

irreversible magnetoresistance不可逆磁电阻

Ordinary Magnetoresistance正常磁电阻效应

英汉例句

• A magnetic head of the present application has a sensor which employs the extraordinary magnetoresistance (EMR) effect.

  本发明的磁头具有利用异常磁致电阻(emr)效应的传感器。

• Tunneling magnetoresistance (TMR) effect of MTJ samples has been successfully studied.

  研究MTJ样品的隧道结磁电阻(TMR)效应。

• A series of giant positive magnetoresistance of magnetic multilayer structure were fabricated by ion-beam sputtering in high vacuum with applied magnetic field and treatment.

  采用离子束溅射方法制备了正巨磁电阻多层膜，在制备过程中采用外加磁场和退火处理。

• Materials with giant magnetoresistance effect have been extensively studied because of their potential application in magnetic recording and sensors.

  由于巨磁电阻效应在磁记录设备和传感器的潜在应用，具有该效应的材料得到了广泛地研究。

• Since the LSMO films exhibit the colossal magnetoresistance effect, they have wide potential applications in the field of information technique.

  由于其具有庞磁电阻效应，使得其在信息技术领域有着广阔的应用前景。

• Giant magnetoresistance (GMR) materials is applied to feebleness magnetic field sensor.

  巨磁电阻(GMR)材料可应用于弱磁场高灵敏度磁传感器。

• The study of the manganese oxides, widely known as manganites, which exhibit the colossal magnetoresistance is among the main areas of research within the area of strongly correlated electrons.

  钙钛矿结构的锰氧化物因为庞磁电阻效应而引起了广泛关注，成为强关联电子体系研究的热点。

• Compared with other magnetic sensors such as Hall elements, semiconductor magnetoresistance elements, the AMR sensors have advantages of high sensitivity, good temperature stability and small volume.

  和其它磁场传感器如霍尔器件、半导体磁敏电阻相比，AMR传感器具有灵敏度高、温度稳定性好、体积小等优点。

• The magnetoresistance curves and microstructures of some samples are measured.

  测量了样品的磁电阻曲线和微结构。

• Moreover, these magnetoresistance data can be fitted well with the theories of quantum interference effects.

  而且磁阻数据可由量子干涉理论拟合的很好。

• The data of magnetoresistance can be accounted for by the contributions from the quenching of superconducting fluctuation and weak localization.

  磁阻的测量结果可以通过超导涨落和弱定域化两个效应的贡献来解释。

• Compared with anisotropic magnetoresistance effect and giant magnetoresistance effect, the sensitivity using HFMI technique is much higher at room temperature and in low magnetic field.

  与各向异性磁阻效应和巨磁阻效应相比，高频磁阻抗效应传感技术灵敏度高、无巴克豪森噪声、适合常温、低磁场检测。

• With the increasing research on giant magnetoresistance (GMR), convenient and fast testing system has become the basis of research on GMR.

  随着巨磁电阻效应(GMR)研究的广泛开展，方便、快速的磁电阻测试已成为研究GMR效应的基础。

• Tunneling magnetoresistance (TMR) discovered in magnetic tunneling junction (MTJ) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new MRAM devices.

  磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。

• The giant magnetoresistance (GMR) effect allows drives like this one, less than an inch in diameter, to detect the tiny magnetic fields that store data in portable electronic devices.

  巨磁电阻(GMR)效应使这样一个驱动器的直径不到一英寸，检测在便携式电子设备中存储数据的微小的磁场。

• No magnetoresistance effect was observed in the temperature range of measurement.

  在测量温度范围内，没有观测到磁电阻效应。

• This paper introduced the giant magnetoresistance materials and their applications to magnetoresistance sensors, read head for high density magnetic recording and magnetic random access memory.

  介绍了巨磁电阻材料在高密度读出磁头、磁传感器、磁性随机存储器等领域的应用。

• The paper introduce the configuration and theory of the InSb magnetoresistance IR-Photoelectrie sensor, and study the output characteristic of the sensor.

  本文介绍了锑化铟磁阻型光电传感器的结构及工作原理，并对锑化铟磁阻型光电传感器的输出特性进行了研究。

• In this dissertation, we investigate mainly two types of film materials with magnetoresistance effects: the manganese perovskites oxide sandwich films and metal granular films.

  本论文主要研究对象是两种类型的磁电阻薄膜材料：锰基钙钛矿结构氧化物三明治多层膜和金属颗粒膜。

• Materials with giant magnetoresistance effect (GMR) have been extensively studied because of their potential applications in magnetic recording and sensors.

  由于巨磁阻效应材料在磁记录设备和传感器的潜在应用，具有该效应的材料得到了广泛地研究。

• A new cryogenic carbon thin film resistance sensor which is of small size, low heat capacity, high sensitivity, fast response and small magnetoresistance is reported.

  报道了一种体积小、热容低、灵敏度高、热响应速度快、不易受强磁场影响的新型碳膜电阻低温传感器。

• The discovery of giant magnetoresistance effect has attracted much attention to research of magnetic transport in inhomogeneous systems, which depends on spin of electrons.

  巨磁阻效应的发现，导致了一个如何正确看待非均匀系统中磁输运性质的问题，并使电子输运状况依赖于自旋内稟属性的物理观念逐渐形成。

• Changing of material resistance with applied magnetic field intensity is called Giant magnetoresistance (GMR).

  磁电阻效应是指材料的电阻随外加磁场变化而变化的现象。