magnetron sputtering中文,magnetron sputtering的意思,magnetron sputtering翻译及用法

2026-03-21 18:36 浏览次数 16

magnetron sputtering

[ˈmæɡnitrɔn ˈspʌtəriŋ]

[电子] 磁控溅射;[电子] 磁控管溅射

magnetron sputtering 例句

英汉例句

  • a magnetron sputtering apparatus and a method for manufacturing thin film are provided.

    提供了一种磁控溅射设备和薄膜制造方法。

  • these two thin films made by magnetron sputtering show better microstructures, leading to better electrochemical properties than those prepared by electrochemical deposition.

    在两种薄膜中,由于磁控溅射所具备的特点,制备合成的薄膜具有特有的微结构,从而使其电化学性能优于电镀薄膜。

  • electrochemical behavior of the anode prepared by magnetron sputtering was compared with that of the anode prepared by conventional process.

    用对比试验的方法比较了纳米级镀铂的钛阳极与传统电镀工艺制备的镀铂钛阳极的电化学性能。

  • based on the distribution of these particles, the growth mechanism of magnetron sputtering films are discussed.

    根据此纳米颗粒的分布,讨论了磁控溅射薄膜的生长机理;

  • the coatings deposited by magnetron sputtering technology have good corrosion and wear resistance. this technique shows optimistic development trend in the field of magnesium alloys surface treatment.

    采用磁控溅射制备的合金表面膜层具有防腐蚀性能优异、耐磨性强等优点,其作为镁合金表面处理技术具有良好的发展趋势。

  • transparent conducting ti-ga co-doped zinc oxide films(tgzo) with high transparency and relatively low resistivity have been successfully prepared by dc magnetron sputtering at room temperature.

    利用直流磁控溅射工艺在玻璃衬底上成功制备出了透过率高、电阻率相对低的钛镓共掺杂氧化锌透明导电薄膜(tgzo)。

  • raman spectrometer and atom force microscope were employed to study and determine the structure and characteristics of the films prepared by the method of magnetron sputtering with graphite target.

    用激光拉曼谱和原子力显微镜等现代分析手段研究了磁控溅射石墨靶制备的薄膜的结构和特性。

  • the development, principle and applications of magnetron sputtering technique are introduced in this paper.

    该文介绍了磁控溅射沉积技术的基本原理、发展及应用。

  • deposition rate is an important parameter in magnetron sputtering and influenced by many factors.

    沉积速率是磁控溅射镀膜技术中的一项重要指标,它由许多因素决定。

  • the thickness uniformity of films deposited by planar magnetron sputtering target was analyzed theoretically.

    从理论上分析了平面磁控溅射靶沉积薄膜的厚度均匀性。

  • a process used to prepare ito transparent conducting films on inorganic glass substrates by d. c. reactive magnetron sputtering is presented.

    研究了用直流反应磁控溅射法在无机玻璃基片上制备ito透明导电膜的工艺;

  • analyses with xrd and xps were made for the r. f magnetron sputtering deposited carbon film on tungsten substrate before and after ar and n ions irradiation.

    对钨基材料表面上射频磁控溅射沉积的碳膜进行了氩离子和氮离子的辐照,并作了xrd及xps的分析。

  • in this paper, micro-grooves and grid titanium and ti-0 films were fabricated by laser light sculpt or unbalanced magnetron sputtering deposition.

    本文采用激光雕刻法、非平衡磁控溅射沉积方法制备钛和氧化钛薄膜微图形。

  • to improve the thickness uniformity of thin films deposited by magnetron sputtering process, the substrate is rotated off its axis in relation to magnetron target.

    溅射原子的角分布、溅射环的宽度以及膜厚均匀性要求都会影响该线性关系。

  • transparent conductive, tungsten-doped indium oxide(iwo) films with the high carrier molbility were grown by magnetron sputtering on glass substrates, followed by in-situ annealing.

    采用直流磁控溅射法在清洁玻璃基片上制备了掺钨氧化铟(iwo)透明导电氧化物薄膜。

  • all samples were prepared by rf magnetron sputtering method.

    所有样品采用射频辅助磁控溅射方法制备。

  • various pd films prepared on glass substrates by magnetron sputtering in vacuum or o2 ambience were used as catalysts.

    结果表明,在真空气氛下磁控溅射的钯膜上无法生长碳纳米管。

  • the kinetic process of reactive magnetron sputtering has been studied.

    研究了反应磁控溅射的动力学过程。

  • high resistance azo films are fabricated on quartz substrates by radiofrequency (rf) magnetron sputtering deposition method in the environment with high oxygen proportion.

    在石英衬底上采用射频磁控溅射的方法制备高电阻azo薄膜,其中高电阻由高氧氩比环境得到。

  • magnetron sputtering has become one of the most important methods for depositing thin films.

    磁控溅射已经成为沉积薄膜的最重要的方法之一。

  • the invention provides a rectangular target with high target utilization ratio, which is used for magnetron sputtering metal films.

    一种高靶材利用率的矩形靶,用于磁控溅射金属镀膜;

  • v2o5 thin films were prepared by rf magnetron sputtering method with v2o5 ceramic target, which were reduced into vo2 thin films annealed in argon atmosphere at 450℃.

    以v2o5陶瓷烧结靶材及射频磁控溅射工艺制备v2o5薄膜,再经氩气气氛退火处理得到vo2薄膜。

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