memory cell中文，memory cell的意思，memory cell翻译及用法

memory cell 英语释义

英语释义

1. a long-lived lymphocyte that carries the antibody or receptor for a specific antigen after a first exposure to the antigen and that remains in a less than mature state until stimulated by a second exposure to the antigen at which time it mounts a more effective immune response than a cell which has not been exposed previously

memory cell 片语

片语

Memory T cell subset记忆性T细胞亚群

effector memory T cell效应记忆性T细胞

memory location[计] 存储单元

memory T cellA [[lymphocyte is shown in the center of this picture]]

memory y cell存储单元

immunological memory T cell免疫记忆T细胞

storage location[计] 存储单元；存储位置

memory B cellB lymphocytes are the cells of the immune system that make antibodies to invading pathogens like viruse They form memory cells that remember the same pathogen for faster antibody production in future infection

memory bit cell单元

naive and memory t cell初始和记忆t细胞

memory cell 例句

英汉例句

such customization of programming thresholds can typically be obtained at any cycle of programming the memory cell (215, 640), to increase flexibility in circuit design.
该编程阈值之客制化一般可在编程该存储单元之任一周期（215，640）获得，以增加电路设计之弹性。
thus, the misfet can constitute a high-performance nonvolatile memory cell suited to high-density integration.
因此，上述misfet可构成适合于高密度集成化的高性能非易失性存储单元。
yet the distance between the ends of the tube remains small enough to allow for speedy reading and writing of the memory cell when it is in use.
而毫微管两端之间的距离足够小，使用过程中可允许存储单元的快速读取和写入。
additional levels of conductive rails and memory cell diodes are formed similarly to build the 3-d monolithic memory device.
类似地形成导电轨和存储单元二极管的附加层级，从而构建3-d单片存储装置。
in the first one, a new memory cell which is comprised of sram cell and eeprom cell is designed.
第一种设计是采用sram和eeprom存储单元组成新的存储单元，然后进行阵列设计；
its memory cell survival time is longer.
其记忆细胞存活的时间则更长。
a non-volatile memory cell operating at low voltage by means of impact ionization for programming.
一种可于低压工作的非易失性存储单元，其通过碰撞电离进行编程。
while the clonal selection principle is responsible for generating the memory cell population, the immune network theory prevents the population size from increasing quickly.
克隆选择用来产生抗原的记忆细胞群体，免疫网络理论则用来抑制该群体规模的快速增长。
more preferably, the device structure contains a memory cell having three quantum wells that can be arranged and constructed to define two different memory states.
更优选地，该器件结构包含存储单元，该存储单元具有三个量子阱，该三个量子阱被设置和构造成限定两种不同的存储状态。
memory cell diodes are formed as pillars in polysilicon between the conductive rails by etching a polysilicon layer using another patterned amorphous carbon layer as a hard mask.
存储单元二极管通过使用另外的图案化的非晶碳层作为硬掩模蚀刻多晶硅层而形成，为置于导电轨间的多晶硅的柱状物。
the multistage memory cell through each bit code to four electric charge level in method, allows in each memory cell to save two data positions.
多级存储单元通过将各比特编码到四个电荷级中的方法，允许在每个存储单元中存储两个数据位。
the circuit can also write information into the memory cell by selective write operation.
该电路也可以经过选择性写入操作把信息写入存储单元。
the invention reduces the size of the memory cell and ensures normal operation of the memory cell.
本发明能缩小存储单元的尺寸，并且保证存储单元能正常工作。
a gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes.
具有栅极的二极管非易失性存储单元，其具有电荷储存结构，包括具有额外栅极端的二极管结构、与位于二极管节点之间的扩散阻挡结构。
in an alternative embodiment, the method for manufacturing the same memory cell structure and repeatedly three-dimensionally integrating or embedding the structure in a system on chip is provided.
在一个替代的实施方案中，提供制造相同存储单元结构并可以重复以三维性地集成该结构或嵌入用于片上系统应用的方法。
the memory cell keeps better antibodies of the antibody population.
记忆单元保存抗体群中亲和力较高的抗体。
dr zettl and his colleagues constructed their memory cell by taking a particle of iron just a few billionths of a metre (nanometres) across and placing it inside a hollow carbon nanotube.
zettl博士和他的同事们通过取一个直径仅几个十亿分之一米的铁粒子，将其置于一个空心碳质毫微管内。
in this paper, two kinds of standards cmos technology memory cell structure are introduced.
本文提出了两种基于标準cmos工艺的存储单元结构。
the invention provides a memory cell and manufacturing method thereof.
本发明公开了一种存储单元及其制造方法。
the invention makes single memory cell possible to store multiple bits and increase memory capacity of cell.
故能在单一存储单元储存多个位，而可提高存储单元的存储容量。
occupies this technical front two kind of main plans including the multistage memory cell and the mirror image position.
处在这一技术前沿的两种主要方案包括多级存储单元和镜像位。
the generation mechanism of stress induced leakage current( silc) in flash memory cell is studied by experiments.
通过实验研究了闪速存储器存储单元中应力诱生漏电流（ilc）产生机理。
the invention is directed to a resistive memory cell on a substrate and a resistive memory array.
本发明公开了一种位于基底上的电阻式存储器单元和电阻式存储器阵列。