英语释义

1. a semiconductor device (such as a diode or a capacitor) in which a metallic oxide (such as silicon dioxide) serves as an insulating layer

片语

metal alumina oxide semiconductor structure氧化铝

Domplementary Metal-Oxide Semiconductor互补金属氧化物半导体

metal l oxide semiconductor金属氧化物半导体

metal nitride oxide semiconductor structuremnos结构

MOS Metal-Oxide Semiconductor金属

metal-oxide semiconductor resistor金属氧化物半导体电阻器

Metal Nitride Oxide Semiconductor金属氮氧化物半导体

memory metal-oxide semiconductor金属氧化物半导体记忆器

metal-oxide semiconductor FET金属

英汉例句

• a multi-threshold field mosfet and a multi-threshold field mosfet unit belong to the technical field of metal oxide semiconductor field-effect transistors.

  一种多阈值场mosfet和多阈值场mosfet组，属于金属氧化物半导体场效应晶体管技术领域。

• to boot an operating system, the bios runtime searches for devices that are both active and bootable in the order of preference defined by the complementary metal oxide semiconductor (cmos) settings.

  要引导一个操作系统，bios运行时会按照cmos的设置定义的顺序来搜索处于活动状态并且可以引导的设备。

• the key points of research work were the sensitivity and the lowest detection limit (lod) of metal oxide semiconductor sensor (mos).

  本项目研究并构建了一个医用电子鼻系统，重点研究金属氧化物气体传感器的灵敏度和最低检测限。

• this configuration forces the pdc master to announce itself as a reliable time source and uses the built-in complementary metal oxide semiconductor (cmos) clock.

  这种配置会强制pdc主机将它自身宣布为可靠的时间源，从而使用内置的互补金属氧化物半导体（cmos）时钟。

• a method of manufacturing a metal oxide semiconductor (500).

  一种制造金属氧化物半导体的方法（500）。

• the first thing the bios does is check the information stored in a tiny (64 bytes) amount of ram located on a complementary metal oxide semiconductor (cmos) chip.

  bios所做的第一件事情是检查存储于位于互补金属氧化物半导体（cmos）芯片上的一块极小（64字节）的ram中的信息。

• in this novel manner, gate stack edge defects may be physically repaired without deleterious consequences to the electrical behavior of a metal oxide semiconductor device.

  在此创新的方法中，得以实际地修补栅极迭层边缘缺陷，而不会对金属氧化物半导体的电气特性造成有害的影响。

• this invention discloses a trenched metal oxide semiconductor field effect transistor (mosfet) cell.

  场效应晶体管以及制造场效应晶体管的方法。

• the invention disclosed a metal oxide semiconductor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof, which is applied to a chip.

  本发明公开了一种具稳压及静电放电防护的金属氧化物半导体元件及其制造方法，其应用于一芯片。

• a gate structure of the metal oxide semiconductor is etched (510).

  将金属氧化物半导体的栅极构造蚀刻（510）。

• the metal oxide semiconductor field effect transistor (mosfet) works on a similar principle, but the diode is buried within the mosfet.

  在金属氧化物半导体场效应晶体管（mosfet）的作品在一个类似的原则，但二极管的mosfet内掩埋。

• the invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.

  本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。

• a digital circuit comprises: a first arm including a first metal oxide semiconductor field effect transistor (m3) configured to act as a load device;

  一种数字电路，包括：第一支路，包括作为负载器件的第一金属氧化 物半导体场效应晶体管（m3）；

• provided is a complementary metal oxide semiconductor (cmos) device and a method of manufacturing the same.

  本发明提供了一种互补金属氧化物半导体（cmos）装置及其制造方法。

• a process comprises that: firstly, the quasi-one-dimensional metal oxide semiconductor nano-material is synthesized;

  其工艺是：先合成準一维金属氧化物半导体纳米材料；

• high mobility p-channel power metal oxide semiconductor field effect transistors.

  高迁移率的p-沟道功率金属氧化物半导体场效应晶体管。

• therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.

  如此可有效率地利用该金属氧化物半导体，并无须另外制作电容，可节省该芯片的尺寸大小，进而降低成本。

• the present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.

  本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。

• the cross-section conductance formula, which contains the sensing function of grain-boundaries and grain-necks in porous metal oxide semiconductor gas sensing crystals, is proposed.

  给出了多孔的金属氧化物半导体气敏晶体的既含晶粒间界传感作用又含晶粒缩颈传感作用的截面电导公式。

• the metal oxide semiconductor films have been used as sensing medium in the opto chemical sensor based on surface plasmon resonance.

  金属纳米粒子膜表现出来的局域表面等离子体共振效应，成为一个快速发展的领域，被广泛的应用在化学传感器和生物传感器。