An unified method for converting MOS circuit level description into logic level description is presented.
本文介绍了一种将MOS电路级描述转换成逻辑级描述的统一方法。
A method is presented for measuring the minority recombination Lifetime in MOS fet's by charge pumping effect.
本文介绍了应用电荷抽取效应测量MOS晶体管中少子复合寿命的方法。
The investigated results are very important for the research and fabrication of the MOS structure gas sensors.
研究结果对于MOS结构的半导体气敏传感器的研制具有重要的意义。
With the decrease of the MOS devices size, hot carrier effect failure get more and more heavy, it become one of the main failure mechanisms.
随着MOS器件尺寸逐渐减小,由热载流子效应导致的损伤变得越来越严重,已成为影响器件性能的主要失效机制之一。
Heat dissipation in MOS gate is in direct Proportion to its output switching activity.
MOS逻辑门电路的功率损耗与其门电路的输出翻转成正比。
In conventional CMOS charge pump circuits, the pumping high voltage is limited by MOS threshold voltage, so that it can not use less cascade stages to pull up a high voltage which we want to generate.
在传统的CMOS电荷泵电路中,电荷泵输出的电压受MOS管的阈值电压限制,所以当要求电荷泵的输出电压较高时,则不得不连很多阶来达到要求。
A differential equation, which describes the transients of pulsed MOS capacitors, is derived.
本文给出了描写脉沖MOS电容器的瞬态特性的微分方程。
The power efficiency of MOS charge pumping circuit is becoming one of the most important issues as the power supply decreasing continuously and the area of a chip.
随着电源电压的不断降低和芯片面积的不断减小,电荷泵的效率已成为MOS电荷泵电路设计过程中最为人们关心的问题之一。
First, increasing demands for processing speed and functional density have pushed IC fabricators to shrink further the minimum dimensions of MOS devices.
首先,增加了处理速度和功能密度的需求,推动IC制造者进一步缩减MOS装置的最小尺寸。
It is possible to do DC analysis or transient analysis for MOS IC.
用它可进行MOS集成电路的直流分析和瞬态分析。
Four modules are included in the SPDT analog switch, for example, MOS switch circuit, driver circuit, buffer circuit, and ESD protection circuit.
单刀双掷模拟开关电路的设计包括四个模块:MOS开关电路、驱动电路、缓沖电路和ESD保护电路。
By use of MOS image sensor developed by ChongqingUniversity and microcomputer data processing, a feasible method for laser accurate micrometry is presented in this paper.
本文提出采用重庆大学研制MOS图象传感器,用微机进行数据处理,实现激光精密测微的一种可行方法。
The bipolar transistors or the resistors in the traditional current reference were replaced by MOS transistors working in the subthreshold region to achieve an all CMOS current reference.
利用工作在亚阈值区的MOS管代替传统电流基準中的三极管或电阻器件,实现了一款全cmos器件的电流基準。