英语释义

1. metal-oxide-semiconductor field-effect transistor

片语

RF MOSFET射频场效应晶体管

ultimate MOSFET终极MOSFET

TrenchFET MOSFET通道

Dualgate MOSFET双栅微波场效应管

Cool MOSFET与的其他MOSFET的区别

Power MOSFETsurface-mount package D2PAK. Each of these components can sustain a blocking voltage of 120?volts and a continuous current of 30?ampere

Vertical MOSFET竖直结构MOSFET

APEC MOSFET台湾富鼎先进

LV MOSFET低压场效应管

英汉例句

• Main circuit uses independent RC pulse generator and control circuit can control the main circuit based on 8051 single chip microcomputer and TC4427 high-speed power MOSFET driver.

  其主电路采用了独立式RC脉沖放电回路，控制电路则通过8051单片机和TC4427高速MOSFET驱动器完成对主电路的控制。

• The parameters for the MOSFET DC model are extracted by the L-Malgorithm in the optimization method.

  本文采用最优化方法中的L - M方法，对MOSFET直流模型参数进行优化提取。

• The article introduces the performance and application of the SKAI automobile power system with low-voltage MOSFET or high-voltage IGBT power component.

  本文介绍了带有低压MOSFET或高压igbt功率器件的SKAI汽车动力系统的性能和应用。

• In the above presentation, the development of MOSFET has been referred to as 4c industry provides an important foundation.

  在上面的介绍中，已经提到MOSFET的发展为4c产业的发展提供了重要的基础。

• The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.

  MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。

• Ultimate analysis magnetic elements「 characteristic, transformer, inductance design and MOSFET switch component」s shaping.

  最后分析了磁性元件的特性，变压器，电感的设计和MOSFET开关器件的选型。

• This circuit has both characters of restricting the current within the giving value and limiting the switching frequency of MOSFET operating on current limited condition.

  该电路具有既能将负载电流限制在设定值以内，又能控制限流工作时功率管的开关频率等特点。

• In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation time.

  此外，这种先进的MOSFET的目的是在雪崩和减刑承受高能量的时间。

• The structure of a vertical multiple-gate MOSFET based on bipolar technology is presented.

  提出了一种基于双极工艺的纵向多面栅MOSFET的结构和工艺。

• DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.

  本文首先建立了一个SOIMOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。

• The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.

  拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特準谐振设计展示出一次侧传导电磁干扰降低的优势。

• The gate is electrically isolated from the source, and while this provides the MOSFET with its high input impedance, it also forms a good capacitor.

  门是电气隔离，从源头上，虽然这提供了具有高输入阻抗的MOSFET，它也形成了良好的电容。

• Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.

  各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。

• Its dual UVLO feature protects the power MOSFET from damage in the event that the gate-drive or supply voltage is too low.

  器件的双uvlo功能保护功率MOSFET不会因栅极驱动或电源电压过低而损坏。

• The paper analyzes the phase-lock technique of serial resonant inverter with power MOSFET as switching device.

  研究了以功率MOSFET为开关管的串联谐振逆变器的频率跟蹤问题。

• MPS700 series dc voltage constant-current power supply, is designed by using linear series MOSFET control mode of the ac input dc output power.

  MPS700系列直流稳压稳流电源，是采用MOSFE T线性串联调整方式设计的交流输入直流输出电源。

• At least 3 years design experience of power supply circuit, analog circuit, digital circuit, MOSFET circuit and MCU circuit.

  3年以上电源产品，模拟数字电路设计经验，熟悉mcu,MOSFET等元器件。

• The stability analysis of MOSFET used in RFIC design is presented in detail.

  本文详细分析了用于射频集成电路设计的mos场效应管的稳定特性。

• Optically triggered MOS gated solid state relay is a new switching device, which is composed of an MOS gated thyristor, a phototransistor, an enhanced mode MOSFET and a Zener diode.

  光控MOS栅固态继电器是由MOS栅控晶闸管、开关三极管、光电耦合器、增强型MOSFET和齐纳二极管组成的新型开关器件。

• For example, the peak at 20 MHz in the spectrum is caused by the parasitic oscillation due to the output capacitance of the MOSFET and the leakage inductance of the transformer.

  举例说明，20兆赫兹的峰点是钳位过程结束后主要由场效应晶体管输出电容和变压器漏感引起的寄生振蕩产生的。

• The fundamental principles of the bulk-driven MOSFET and mixer are discussed.

  讨论分析了混频器和衬底驱动MOSFET的工作原理。

• This method has the same device area and is completely compatible with the bulk MOSFET process.

  这种抑制浮体效应的方法不增加器件面积，而且与体硅MOSFET工艺完全兼容。

• ISFET is based on MOSFET structure and used to measure biochemical parameter.

  ISFET是基于MOS结构，用于生化参数测量的传感器。

• In this chip, the magnetic sensor cell is implemented with a novel sector split drain MOSFET transistor (sector MAGFET), which can directly transfer magnetic signal into current output signal.

  在芯片中的磁敏传感器单元采用扇形分裂漏MOSFET磁敏晶体管(扇形MAGFET)，直接将磁信号转化为电流信号输出。

• Moreover, a factor of sensitivity affecting the unique solution of optimal parameters is analysed and some modified methods are provided for MOSFET parameter optimization.

  本文还分析了影响参数优化唯一解的灵敏度因素，提出了对MOSFET器件参数优化的一些改进方法。