英汉例句

• Conservative extrapolation of current technology suggests that match-book size removable hard disks (or the equivalent nonvolatile memory chips) will store about 60 megabytes each.

  对当前技术的保守推断表明，每个书本大小的可移动硬盘(或者等价的非易失性内存芯片)能存储大约60兆字节。

• Nonvolatile memory device and method of operating the same are provided. Provided is a method of reliably operating a highly-integrated nonvolatile memory device.

  本发明提供一种非易失性存储装置及其操作方法，所述操作方法为可靠地操作可高度集成的非易失性存储装置的方法。

• Valuable data assets reside in nonvolatile memory so they are protected against the loss of electrical power - regardless of whether the loss is deliberate.

  有价值的数据驻留在非易失性存储器中，以免因为断电而丢失—不管这种断电是有意还是无意。

• One way to circumvent this issue is to run the system「s nonvolatile memory on a separate power supply and switch off everything else during standby operation.

  绕过这个问题的一个方法是给系统的非易失性内存一个单独的电源，并在待机期间关闭所有电路。

• An array of charge trapping nonvolatile memory cells is arranged in several columns of cells, each arranged in a series, such as a NAND string.

  一种电荷陷获非易失存储器单元的阵列，排列为多列单元，且每一列为串联安排，如NAND串。

• The design method of nonvolatile memory based on intelligent controller of circuit breaker was researched.

  研究了断路器智能控制器的非易失性存储器的设计方法。

• With the growing popularity of portable electronic devices, people」s requirement for high-density, high-speed, low-power and low-cost nonvolatile memory is also increasing.

  随着便携式电子设备的不断普及，人们对于高密度、高速度、低功耗以及低成本的非挥发存储器的需求也在与日俱增。

• In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.

  在非易失性存储装置中，可以通过将擦除电压施加到位线或共源线来从存储晶体管擦除数据。

• More than 200 times faster to access than flash memory, FeRAM is a type of nonvolatile memory that has many possibilities for use as next-generation semiconductor memory.

  铁电存储器的存储速度比闪存的存储速度快200多倍，是一种极有可能成为下一代半导体存储器的非易失性存储器。

• A programmed region, i. e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed.

  在编程此反熔丝一次可编程非易失存储器单元后，已编程的区域(例如为连结)可作为二极管，其形成于反熔丝上。

• The full charge capacity stored in the nonvolatile memory is rewritten.

  重写存储在所述非易失性存储器内的满充电容量。

• The on-chip Flash allows the program memory to be reprogrammed in-system or by a conventional nonvolatile memory programmer.

  片上闪存步伐存储器可以编程就可以在体系或由传统的非易失性存储器编程。

• Embodiments relate to a nonvolatile memory device and a method for manufacturing the same.

  本发明实施例涉及一种非易失性存储器件及其制造方法。

• The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line.

  所述非易失性存储装置可以包括在位线和共源线之间的串选择晶体管、多个存储晶体管和地选择晶体管。

• A storage apparatus using a nonvolatile memory as a cache and a mapping information recovering method for the storage apparatus are provided.

  提供一种使用非易失性存储器作为高速缓存器的存储设备以及用于该存储设备的映射信息恢复方法。

• According to the invention, the security purpose of the nonvolatile memory is achieved.

  根据本发明，可以达到非易失性存储器的安全保密的目的。

• A nonvolatile memory (31) includes a global line (65) and a first block (61) and a second block (62).

  一种非易失性存储器(31)包括一条全局线(65)及一个第一块(61)及一个第二块(62)。

• This memory comprises a nonvolatile memory cell and a refresh portion for rewriting data in the memory cell.

  该存储器备有：非易失性的存储器单元和对存储器单元进行重新写入用的更新部。

• A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes.

  具有栅极的二极管非易失性存储单元，其具有电荷储存结构，包括具有额外栅极端的二极管结构、与位于二极管节点之间的扩散阻挡结构。