英语释义

1. a photosensitive resin that loses its resistance to chemical etching when exposed to radiation and is used especially in the transference of a circuit pattern to a semiconductor chip during the production of an integrated circuit

片语

positive photoresist正性光致抗蚀剂

photoresist coveringer涂胶器

photoresist technology光刻胶工艺

photoresist etching光刻胶掩蔽腐蚀

optical resist光刻胶

AZ9260 photoresistAZ9260光刻胶

solid photoresist固体光刻胶

nagative photoresist负性光刻胶

photoresist system光阻系统

cinnamate photoresist肉桂酸酯光刻胶

英汉例句

• the models are based on usual simulation models for chemically amplified photoresist added with swell model and the model for depth- dependent dissolution rate effect.

  这个模型在普通的化学放大胶光刻模拟的基础上，添加了溶胀模型和对显影速率随深度变化效应的模拟。

• photoresist grating was fabricated by holography, and it was used in the mask of ion etching.

  采用全息法制备了光刻胶光栅，并用该光栅掩膜离子蚀刻。

• using the alkali-ethanol aqueous solution as the developer the photoresist can be of negative tone.

  用氢氧化钠-乙醇水溶液显影可以得到负性光刻图形；

• a new quisa liga process using multilayer photoresist technology is presented in this paper.

  针对liga技术所存在的缺点，提出了一种利用多层光刻胶工艺的準liga技术。

• the process of su-8 photoresist lithography is researched, and the influence of steps like coating and soft-bake on the lithography is studied.

  初步研究了su-8胶的光刻工艺流程，讨论了涂胶、前烘等各个步骤对光刻结果的影响。

• with the protection of photoresist sidewall, the emitter passivation ledge is fabricated by wet etch.

  利用光刻胶形成保护侧墻，用湿法腐蚀来形成发射极钝化边沿。

• therefore, the study of photoresist stripping by using atmospheric pressure plasma is very important in the research and the practical application.

  对常压射频冷等离子体去除光刻胶的研究具有重要的学术意义和实用价值。

• the process was controllable and could be applied to strip the photoresist residual of diffractive optical element fabricated on the thick substrate.

  该工艺具有良好的可控性，解决了在厚基片上制作大口径衍射光学元件时残余光刻胶的去除问题。

• the results show that the technology of melting photoresist is a simple and practical technology of fabricating microlens array.

  结果表明，光刻胶热熔技术是一种简单、实用的微透镜阵列制作技术。

• this technique is fully compatible with conventional cmos processes by employing silicon oxide and photoresist to mask thick aluminum film during dry etching.

  这种技术利用氧化硅和光刻胶双层复合掩模来掩蔽厚铝的干法刻蚀，完全兼容于cmos工艺；

• process parameters of su-8 photoresist based uv-liga technique were optimized. the influences of expose time and the wavelength of expose source(on the resist formation) were investigated.

  对基于su-8胶的uv-liga技术进行了工艺优化，研究了光源波长和曝光时间对su-8胶成型的影响。

• the laser direct writing(ldw) system svgldw 04 with a projection optical system and a spatial light modulator(lcd-slm) can expose a reduction pattern directly on a photoresist plate.

  通过双远心成像光路，激光直写（ldw）系统svg-ldw04把液晶空间光调制器（lcd-slm）上的光斑直接成像在光刻胶板上，得到高质量的光斑图形。

• then the wafer is sent through a chemical bath that etches trenches into the exposed substrate, while leaving the areas covered by the photoresist untouched.

  晶圆再经过化学浸浴，利用腐蚀剂去蚀刻暴露出来的硅基质，同时那些覆盖有光阻剂的区域依然完好无损。

• a photoresist pattern can be formed on the dielectric.

  在该电介质上形成光致抗蚀剂图案；

• researches on the two-photon photopolymerization technology of su8 negative photoresist have been processed.

  飞秒激光su8负性光刻胶双光子聚合工艺研究。

• a small undesired hole in an oxide opaque region of a mask or reticle or in a photoresist layer.

  氧化物、掩模或标线的不透明区域，或光刻层中不需要的小孔。

• photoresist coating preparation and baking; thin film preparation.

  光刻胶的旋涂与烘烤，薄膜材料制备。

• recently, more attention has been paid to a novel photoresist stripping technology based on atmospheric pressure plasma.

  常压射频冷等离子体去除光刻胶是近年新兴起的技术，已经成为国际上研究的热点之一。

• the technique of fabrication of microlens array by means of melting photoresist is introduced in this paper.

  介绍了利用光刻胶热熔法制作微透镜阵列这种简单、实用的技术。

• the results show that the photoresist which contains cinnamyl group exhibited an excellent thermal stability and adequate photosensitive properties.

  研究结果表明，这种含肉桂基的光刻胶具有优良的耐热性与适宜的光敏特性。

• we developed a non silicon surface micro machining process with two or three mask electroplating layers and using polyimide or photoresist as sacrificial layers.

  我们研制的非硅表面微机械工艺采用两次或三次掩模电镀层，聚酰亚胺和光刻胶分别作为底层和第二、第三层的牺牲层。

• an optimized uv-liga technique, based on su-8 photoresist process, was successfully applied to manufacture the thick nickel hexagonal micromesh sieve-sheets with high open area.

  分析了现有的精细金属网板制造工艺的优缺点，提出了采用基于su-8光刻胶的uv-liga技术来制备大厚度高开孔率精细金属网板的工艺方法。