The mobility and the lifetime of minority carriers in polysilicon films are two key parameters of current gain increment.
多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数。
The results show that the properties of grain-boundary states in recrystallized polysilicon films sharply depends on the crystallographic structure of the films.
实验结果表明:多晶硅薄膜的晶粒界面态和硅离子注入后多晶硅薄膜的晶粒组成结构是密切相关的。
An experiment was conducted to study the high-temperature annealing characteristics of polysilicon films using atomic force microscope, secondary ion mass spectroscopy and probe.
利用原子力显微镜、二次离子质谱分析仪和探针,对多晶硅薄膜的高温退火特性进行了实验研究。
Based on a theoretical model for LPCVD, computer simulation of PECVD polysilicon films has been performed by employing the concept of 「electron temperature」.
在LPCVD理论模型基础上,通过引进「电子温度」,对PECVD多晶硅膜进行了计算机模拟分析。