片语

quantum-well ld量子阱激光器

photonic quantum-well光量子阱

quantum-well materials翻译

quantum-well laserA quantum well laser is a laser diode in which the active region of the device is so narrow that quantum confinement occur Laser diodes are formed in compound semiconductor materials that (quite unlike silicon) are able to emit light efficiently.

quantum-well material翻译

strained quantum-well应变量子阱

quantum-well superlattice量子阱超晶格

quantum potential well量子势阱

quantum cylinder well圆形势阱

英汉例句

• The numerical simulation results show the quantum limit of the quantum well width, beyond which will observe the resonant tunneling phenomena.

  数值模拟结果给出这类电子器件的量子极限——可观察到共振隧穿现象的量子阱宽度的限度。

• The polarization dependent optical confinement factor of waveguide structure with mixed strained layer multi quantum well has been discussed in this paper.

  本文从理论上对混合应变量子阱结构(既有张应变量子阱又有压应变量子阱)的光学限制因子进行了讨论。

• The transfer matrix and transmission coefficient through a parabolic quantum well are obtained by solving schrodinger equation .

  文中通过求解薛定谔方程得到抛物形量子阱的变换矩阵与透射系数。

• The rate equations for multi quantum well VCSELs are deduced theoretically; and its output characteristics, i.

  从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。

• The numerical results show that the interactions of the interface phonon and an electron in quantum well are not ignorable.

  数值计算结果表明，量子阱中界面声子与电子的相互作用是不可忽略的。

• Quantum dot is a new kind of low-dimensional quantum structure, which, together with quantum wire, is developed after superlattices and quantum well in the late 80's of last the century.

  量子点是继超晶格和量子阱之后，于上个世纪80年代中后期和量子线同时发展起来的一种新型低维量子结构。

• Currently quantum well VCSEL (Vertical Cavity Surface Emitting Laser) is one of the most active research problems in the field of optoelectronics.

  半导体垂直腔面发射量子阱激光器是当前光电子学领域最活跃的研究课题之一。

• Finally, the effect of the structure on resonant tunneling through a parabolic quantum well is studied.

  最后，讨论了结构变化对抛物形量子阱的共振隧穿的影响。

• Achieving the energy level position in quantum Wells of quantum well infrared photodetectors (QWIPs) is the base of designing QWIP other parameters.

  量子阱中能级位置的确定是获得量子阱红外探测器其它设计参数的基础。

• The polarization eigcnfrequencies of symmetric and unsymmetric quantum well are given.

  以及对称和非对称量子阱中面声子的色散曲线。

• Further developments are expected to have a potential applications in such as solar energy conversion, photo-switch, quantum well lasers etc.

  该技术及其所制备的材料在光电转换、光开关和量子激光器等方面将获得广泛的应用。

• Electric field applied perpendicularly to the layer of quantum wells can change the optical properties(abstraction, reflection and photoluminescence)of semiconductor quantum well structures.

  而在垂直于量子阱平面的方向外加电场可以显着的改变半导体量子阱结构的光学性质（如吸收、反射、光致发光等）。

• The transmission spectrum of multiple quantum well structure with thickness-modulated dual-period was studied by means of transfer matrix method.

  采用传输矩阵方法，研究了一维双周期厚度调制的多量子阱的透射谱。

• At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction.

  模拟表明，在恒定的偏置电流下，沿集电结方向移动量子阱能显着提高光学带宽。

• The dual polarization dual wavelength lasers with active layer of mixed strained layer quantum well are reported in this paper.

  本文报道了以混合应变量子阱结构为有源区的激光器。

• The additional upper state is created by a first quantum well adjacent to the injection barrier.

  新增高能态是通过注入式势垒旁第一个量子阱来创建的。

• The energy equilibrium model—The stability theorem on the strained quantum well structure materials have been introduced in the paper.

  介绍应变量子阱材料的稳定性理论——能量平衡模型；

• A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided.

  提供了一种用于发光二极管的多量子阱(MQW)结构以及用于制造用于发光二极管的MQW结构的方法。

• It is indicated that the laser structures with many quantum Wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.

  结果表明，当激光器包含多个量子阱时，量子阱内部的载流子密度的不均匀性会损害激光器的性能。

• The luminescence origin of the film was discussed with a quantum well model in combination with percolation theory.

  最后，采用量子限制模型并结合渗流理论解释了实验现象。

• A simple equivalent circuit model of quantum well laser (QW LD) which is derived by QW rate equations and is accomplished in the circuit simulation program SPICE.

  给出一个新的量子阱激光器等效电路模型，由量子阱激光器单模速率方程推导得到并在电路模拟程序SPICE中完成。

• In summary, through this thesis work, it was in details studied that the influence of level filling on optical properties of quantum well in both electric field and magnetic field.

  综上所述，通过本论文的工作，详细的研究了在有外加电场与磁场参与的条件下，能级填充对量子阱光学性质的影响。

• Laser diodes: feedback and stimulated emission. cavity design; double heterostructure concept. quantum well wire dot active regions. strained layers; pseudomorphic active regions.

  雷射二极体：回馈与受激放射。共振腔设计，双异质结构之概念，量子井、量子线与量子点之主动层。应变层，假晶材料之主动层。