In this system, two single chip computers communicate with each other through dual port SRAM to realize high speed picture and work for display scan and graphic process respectively.
该系统采用两片单片机分别负责显示扫描和图形变换,两者通过双口sram连接,实现高速图形显示。
It has adopted a kind of frame store method that utilize SRAM chip to solve the collection of video signal.
并且采用了一种利用SRAM芯片的帧存储方法来解决视频信号的采集问题。
These chips were SRAM memory chips often used to get new manufacturing processes debugged.
这些芯片SRAM存储器通常用来获取新的芯片制造工艺调试。
A practical design of a dual-port SRAM embedded in OLED display driver ICs was presented.
详细描述了一种集成在OLED显示驱动芯片中的双端口SRAM设计。
The high-speed and low power SRAM has become a hot research area in today「s digital research fields.
目前,高速低功耗SRAM的研究成为数字集成电路领域中的研究热点之一。
Traditionally, an SRAM chip is made more dense by shrinking its basic building block, often referred to as a cell.
从传统上而言,SRAM芯片通过缩小基本构建单元,来制造得更加紧密。
A low-power bitline architecture in SRAM was proposed, the low bitline voltage was realized by incorporating two techniques.
提出了一种用于SRAM的低功耗位线结构,通过两种途径来实现低位线电压。
A two-port SRAM memory cell (20) includes a pair of cross-coupled inverters (40) coupled to storage nodes.
一种二端口SRAM存储器单元(20)包括耦合到存储节点的一对交叉耦合的反相器(40)。
We apply both two methods in the design of SRAM decoder and achieve a satisfying result.
SRAM的译码使用这两种技术,取得了很好的效果。
Sometimes, the contents of a ROM chip are copied to SRAM or DRAM to allow for shorter access times (as ROM may be slower).
有时,内容的光碟片复制到SRAM或DRAM芯片,以便缩短存取时间(如rom可能会比较慢)。
The Phase I grant supported a six-month effort to develop a low-power 」green' battery with a 30-plus year shelf life that will power a SRAM (static random access memory) circuit for a computer device.
阶段I合同为期6个月,开发一个低功率「绿色」电池,附带30年保存期限,为计算机设备SRAM(静态随机存取内存)电路提供动力。
In this example, the metal one layer of a SRAM cell has been modified to reduce the probability of shorts between metal one nodes.
在这个例子中,静态随机存储器单元的金属层已被修改,以降低金属节点之间短路的概率。
The IDT70V9289 is a new kind of high - speed synchronous dual - port SRAM made by IDT. It can be used to link two different kinds of high - speed data flows.
IDT70 V 9289是IDT公司新推出的一款高速同步双口静态存储器(SRAM),可实现不同传输方式的双路高速数据流的无损传输。
Realizes the DDS electric circuit and SRAM with FPGA is for increase the system the flexibility, in order to have the waveform which needs.
用FPGA来实现DDS电路和SRAM是为了增加系统的灵活性,以便产生所需要的信号波形。
Claimed weights range from 755-780 grams, which includes bottom bracket and puts them firmly in the ballpark of SRAM XX despite the aluminum arms.
声称重量范围从755-780克,其中包括中轴和放入的SRAM二十球场他们牢固尽管铝武器。
This paper introduces the design technology of CMOS SRAM radiation harden circuit.
本文介绍了CMOSSRAM抗辐照加固电路的逻辑电路和版图加固设计技术。
The SRAM programmable devices of ALTERA Corporation have been used widely, but its specified configuration devices are expensive.
ALTERA公司SRAM工艺的可编程器件应用广泛,但专用配置器件比较昂贵。