the test results show that the micro temperature sensing element on pi film exhibits good linearity and a temperature coefficient of resistance is close to 0. 0023/℃.
from resistance-temperature (r-t) measurement and calculation, it is found that both r and temperature coefficient of resistance (tcr) of the films are increased after annealing.
电阻温度特性测试表明,退火后薄膜的电阻(r)和电阻温度系数(tcr)都明显增大。
as the detecting material of uncooled infrared detectors, vanadium oxide (vox) thin films need high temperature coefficient of resistance (tcr) and suitable film resistance for using of the device.
measuring principle and sensitivity of non-balanced bridge is analyzed. a method of measuring temperature coefficient of resistance by this bridge has been discussed in this paper result is accurate.