through numerical calculation and analysis, the effects of structure parameters on far field pattern and threshold current density are studied.
通过数值计算分析,详细研究了结构参数对远场及阈值电流密度等的影响。
in particular, there is an optimal well number corresponding to the lowest threshold current density for mqw structure in the microcavity lasers.
特别是在微腔多量子阱结构中存在一个最佳阱数对应着阈值电流密度的最小值。
further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spe.
进一步分析认为,这是因为条宽变窄导致器件阈值电流密度、阈值载流子密度变大造成的。
the dislocationincreased the threshold current density of the ldsthrough the leakage current.