片语

high threshold voltage高阈值

threshold voltage shift阈值电压漂移

Geiger threshold voltage盖革阈电压

threshold trip voltage跳脱电压

numerical control threshold of voltage数控阈值

threshold value voltage阈值电压

adjustable threshold voltage阈值可变

threshold voltage drifts阈电压漂移

logical threshold voltage逻辑阈电压

英汉例句

• threshold voltage calculated according to the model is matched with results of numerical simulation.

  通过数学推导，给出了基于物理模型的阈值电压的解析表达式；

• we mainly focus on the threshold voltage shift under subsequent positive bias temperature (pbt) stress after the preceding nbt.

  主要集中在对器件施加nbt和随后的pbt应力后器件阈值电压的漂移上。

• as technology evolves, the threshold voltage will be re- duced accordingly, which results in an exponential increase of standby power.

  随着工艺的发展，器件阈值电压的降低，导致静态功耗呈指数形式增长。

• we also, discuss the features of a single charge soliton in detail, such as peak potential, peak width, threshold voltage and their dependences on the array parameters.

  文中还详细讨论了单电荷孤子的峰高、峰宽和阈电压等方面的特征以及它们随结链结构参数的依赖关系。

• layout for measuring the uniformity of threshold voltage has been designed, including structures for measuring many material and process parameters. this layout is adaptable to many process.

  本文设计了一套适合多种工艺的阈值电压均匀性研究测试版图，包括多种材料参数和工艺参数测试图形。

• the influence of decomposition temperature on the threshold voltage is consistent with the principle of material design of thermochemical hole burning.

  理论分析表明，阈值电压对热分解温度的依赖关系反映了活化能对热化学烧孔反应速度的影响。

• and the threshold voltage of lcd decreases with the increase of the anchoring.

  液晶盒的阈值电压随锚定强度的增大而减小。

• effects of polysilicon gate doping concentration, si body doping concentration, the width and height of si body and the gate oxide thickness on threshold voltage were investigated.

  并由此讨论了多晶硅栅掺杂浓度、硅体中掺杂浓度、硅体的宽度和高度以及栅氧化层厚度对阈值电压的影响；

• adding 3% of these compounds to a polar and a nonpolar liquid crystal mixtures significantly reduces their threshold voltage while only causes a modest increase in viscosity.

  往一种极性和非极性液晶混合物中添加3％的这些化合物，可以大大降低液晶混合物的阈值电压，而只引起粘度的小量增加。

• dc model of soi mosfet including output current model and threshold voltage model is proposed in this paper. the velocity saturation effect is considered.

  本文首先建立了一个soimosfet器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。

• threshold voltage window is approx 17v, and this transistor has nondestructive readout characteristic.

  这种晶体管的阈值电压窗口约17伏，且具有不破坏的读出特性。

• going back to the clipping diodes now, the diodes have no effect until the signal at the output is greater than the threshold voltage of the diode.

  回到剪辑二极管现在，二极管没有影响到信号输出大于阈电压的二极管。

• then , an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical ( qm ) effects.

  给出了电子密度的隐式表达式和阈电压的显式表达式，它们都充分考虑了量子力学效应。

• it is the coulomb blockade effect. secondly, the effects of electric parameter to the threshold voltage are discussed by numerical simulation.

  其次，通过数值模拟，讨论了电路参数对阈值电压的影响，阈值电压不仅与电容与电感有关，而且与电阻也密切相关；

• the dependence of the threshold voltage on pressure, gap widths has also been studied in the same range.

  也研究了在此气压范围内火花室阈值电压与气压和间隙宽度的关系。

• a novel under-voltage lockout circuit is proposed which could generate reference voltage and bias current itself, and could stabilize lockout threshold voltage and hysteresis quality.

  提出了一种能够自产生基準电压和偏置电流，并且锁定阈值电压和迟滞量稳定的新型欠压锁定电路。

• fig. 7 depicts an example set of threshold voltage distributions in a multi-state device with direct programming from the erased state to a programmed state.

  图7描绘多状态装置中关于从经擦除状态到经编程状态的直接编程的阈值电压分布的示范性集合。

• it is found that the change of threshold voltage value fits in exponential law with absorbed dose, which is caused by the effect of space charge and interface charge.

  产生这种现象的原因是场效应管氧化物中的空间俘获电荷与吸收剂量近似成线性变化，对阈值电压变化和吸收剂量有近似线性的改变；

• we deduced a expressions for threshold voltage temperature coefficient of short channel most.

  推导了了一个短沟道most阈值电压温度系数表达式；

• the emission threshold voltage can thus be decreased.

  降低发射阈值电压。

• the threshold voltage and the peak of proportional difference for mosfet devices will change after the uniform high electric field stress.

  在均匀的高电场应力下，mosfet器件的阈值电压和输出特性的比例差分峰值会有所改变。

• the experimental results show that this instable drift of threshold voltage induced by slow interface states is repeatable at each power on measurement.

  结果表明，该种由慢界面态造成的阈电压变化在每次开机测量下具有重复性。

• the sub-threshold slope, threshold voltage shift, substrate technique and the anti-radiation ability of field oxides are the four main impacts on the device fabrication in size scaling down.

  亚阈斜率、阈值电压漂移、衬底技术和场氧抗辐射能力已经成为器件按比例缩小给器件带来沖击的最主要的四个方面。

• fig. 8 depicts an example set of threshold voltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.

  图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。

• the paper has analyzed temperature characteristics on high voltage power ldmost s threshold voltage and given a calculation formula of its temperature coefficient from computing results.

  阈值电压的温度系数可以用温度的线性表达式来计算，从而可以得出功率ldmos阈值电压的温度系数最优化分析。