study design parameters conduction resistance and blocking voltage influence;
研究了设计参数对导通电阻和阻断电压的影响;
schottky barrier rectifier. max recurrent peak reverse voltage 40v. max rms voltage 21v. max dc blocking voltage 40v. current 1.0a.
肖特基势垒整流器。最大的经常峰值反向电压40v。最大rms电压21v。最大直流阻断电压40v。电流1.0a。
blocking voltage up to 1800v;
阻断电压高达1800采用。
schottky barrier rectifier. max recurrent peak reverse voltage 30v. max rms voltage 21v. max dc blocking voltage 30v. current 1.0a.
肖特基势垒整流器。最大的经常峰值反向电压30v。最大rms电压21v。最大的隔直流电压30v。电流1.0a。
the forward voltage drop in the on-state is only a few volts(typically 1 to 3 v depending on the device blocking voltage rating).
在导通状态的正向压降很小(取决于阻断电压的值,一般为1~3伏)。
in the design of blocking voltage capability, the simplified formulas for the base region thickness and for the choice of doping concentrations are proposed.
提出了阻断电压设计中关于基区宽度和基区杂质浓度选择的简化公式。
first, the factors that influence the blocking voltage bvak of power static induction thyristor (power sith) are discussed and some new anode structures are proposed to improve it.
分析了影响电力静电感应晶闸管阻断电压bvak的因素,提出了提高bvak的方法,并构造了几种阳极结构。