英语释义

1. the potential difference in volts that when applied across a layer of electrically insulating substance is just sufficient to initiate a disruptive discharge

片语

breakdown reverse voltage反向击穿电压

dc current breakdown-voltage直流击穿电压

breakdown-voltage strength抗电强度

improvement factor of breakdown-voltage击穿电压增益

breakdown n voltage哗电压

collector breakdown voltage集电极击穿电压

Breakdown E Voltage崩溃电压

breakdown potential击穿电压

break-over voltage导通电压；击穿电压

electric breakdown voltage电击穿电压

reverse breakdown voltage反向哗电压；[电子] 反向击穿电压；反向破坏电压

英汉例句

• according to the company, the large and heavy vacuum tube-based traveling wave tube amplifiers cannot be effectively replaced by gaas transistors because they a much lower breakdown voltage

  根据公司的消息，真空管将不会被砷化镓晶体管取代。

• the power dual base transistor (dubat) has been designed and fabricated by increasing the breakdown voltage and current capacity of the device.

  在重点考虑了提高击穿电压和增大电流容量的基础上，设计并研制出功率型dubat。

• standard test method for dielectric breakdown voltage and dielectric strength of d149 astm solid electrical insulating materials at industrial power frequencies.

  astmd149固体电绝缘材料在工业电源频率下的介电击穿电压和介电强度的试验方法。

• the reverse breakdown voltage is influenced by change of electric field after electron irradiation.

  器件的击穿电压和反向漏电流受辐照影响减弱，其电学阈值增加。

• the exact determination of the breakdown voltage must therefore be attached to the measurement of an electrical value characteristic of the dielectric breakdown phenomenon.

  因此击穿电压的检测必须重视电介质击穿现象的电参数值的测量。

• breakdown voltage is not only a key characteristic of ac ceramic capacitors, but also the most difficult technical barrier.

  击穿破坏电压是交流瓷介电容器最主要的技术参数，也是最难解决的技术难题。

• in the condition of long electrode gap and high volume ratio of solid medium, the breakdown voltage of negative is always lower than that of positive.

  实验范围内，不论是直流还是交流电压，占空比大的气固混合两相体击穿电压值总是低于占空比小的。

• purpose: color tv chroma output and high breakdown voltage driver.

  用途： 用于彩电行输出和高击穿电压驱动。

• this paper discusses the breakdown voltage of mmo (mixed metal oxide) net anode and oxygen depolarization for the large-scale storage tank.

  探讨了大型储罐罐底mmo网状阳极的击穿电压和氧气去极化问题。

• it is theoretically testified in this paper that the breakdown voltage is in direct proportion to the electron mean energy of pulsed corona plasma in a coaxial-electrode system.

  通过理论推导得到脉沖电晕放电等离子体的电子平均能量（用电子温度表示）与同轴电极系统中的击穿电压有成正比的关系。

• measure the reverse breakdown voltage by sourcing a specified re verse current bias, then measuring the voltage drop across the diode.

  通过施加规定的反向偏流，然后测量二极管两端的电压，即可测得反向偏置电流。

• a number of critical process parameters associated with breakdown voltage in the conventional process are discussed in terms of theory and experiment.

  从理论和实验中分析了常规工艺中影响击穿电压的几个关键工艺参数。

• the application of adi and high-order compact finite difference method to the breakdown voltage analysis of thin film soi resurf structure.

  采用adi与高阶紧致差分相结合的方法计算薄膜soiresurf结构击穿电压。

• the breakdown voltage plays an important role in predicting remaining life of the large generator ground wall insulation.

  击穿电压在大电机主绝缘寿命评估中有着重要的作用。

• experiments snow that adding 10% air to sf6 gas can apparently increase the lightning impulse breakdown voltage of sf6 in a highly non-uniform electric field.

  实验表明，在sf_6中加入10％的空气可明显提高在极不均匀电场中的雷电沖击击穿电压。

• voltage regulator diode. working voltage (nom) 180 v. transient suppressor diode. reverse breakdown voltage 168 v.

  稳压二极管。工作电压（名称）180v。瞬态抑制二极管。反向击穿电压168v。

• when the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.

  当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。

• lightning impulses are applied to carry out to gain insight into the influence of haze on the breakdown voltage and discharge path in this work.

  为研究雾霾对放电发展的影响，利用水雾、粉煤灰等模拟雾霾天气，采用雷电沖击电压进行了雾霾对击穿电压和放电路径影响的实验研究。

• as shown in diagram 1, as from the voltage uc, the leakage current increases very swiftly and the breakdown voltage is reached for value ue.

  正如图1所示，而从电压uc开始，漏电电流迅速增加，击穿电压达到ue。

• in the test of breakdown voltage of power transistor with sipos passivation layer before packaging, an abnormal curve of breakdown voltage was found, which was a double-line breakdown voltage curve.

  测试半绝缘掺氧多晶硅（sipos）层钝化的功率晶体管管芯反向击穿电压曲线时，出现异常击穿曲线——「双线击穿」曲线现象。