英汉例句

• by quasi two dimensional analysis, a new threshold voltage model for deep submicron buried channel mosfet「s is derived in this paper.

  根据埋沟mosfet导电机理和开启特性，利用準二维分析，导出了一个适用于深亚微米埋沟器件的开启电压模型。

• a sub micron buried channel pmos transistor has been taken as the vehicle to demonstrate the methodology of using d optimal design to fit response surface and its advantage…

  本文以亚微米埋沟pmos晶体管为例，讨论了用d优化的实验设计拟合响应表面的方法以及改善模型拟合精度的措施。

• the project requires the construction to be carried out in various ground conditions ranging from deep buried channel of kallang formation to old alluvium formation.

  本工程地层为从深埋的加冷河构造通道到旧的沖积层构造，施工地层条件变化多端。

• the effect factors such as the buried channel junction depth and substrate doping concentration on the ccd」s optimum operating point and maximum charge capacity are analysed.

  分析计算了埋沟结深、衬底掺杂等对ccd最佳工作点及最大电荷处理量的影响。

• this paper reports a buried channel structure for low power transverse voltage type ic pressure transducer. the fabrication and process computer simulation has been completed successfully.

  本文提出一种低功耗埋沟式横向电压型集成压力传感器结构，并根据精确的工艺模型成功地进行了工艺计算机模拟程序和制作。

• the 2048-element ccpd to be butted uses three-phase three-level polysilicon overlapping gate buried channel structure.

  用于拼接的2048位ccpd是采用埋沟三相三层多晶硅交迭栅埋沟结构。

• the principle of operation, structure and characteristics of 150-element buried channel charge-coupled device with a photodiode array (bccpd) are reported.

  本文报道了150元bccpd线阵电荷耦合图象传感器的结构特点和工作原理；

• the mechanics of the potential well of buried channel charge coupled device (ccd) are described.

  对埋沟电荷耦合器件（ccd）的势阱形成机理进行了描述。

• it successfully predicts the threshold voltages of buried channel mosfet's with a large range of channel lengths. also, the reducing substrate bias effects in deep submicron devices are included.

  模型反应了较宽沟长范围内埋沟mosfet的开启电压与沟长及偏置的关系，并预测了在深亚微米下衬偏效应随沟长减小而减小的特性。