For isolated LDMOS devices, the resistance between the lateral isolation wall (32) (tied to the source) and the buried layer (24) is reduced, thereby reducing substrate injection current.
对于隔离的LDMOS器件,横向隔离壁(32)(结合至源极)与埋层(24)之间的电阻减少,从而减少了衬底注入电流。
An on-resistance self limitation 2-d model for integrated power devices with buried layer is proposed.
对具有埋层结构的集成大功率器件提出了导通电阻自限制二维模型。
The soft soil subgrade treatment should be adopted different measures according to the physical and chemistry characteristics of soft soil, buried layer depth, material condition and road.
软土路基处理应根据软土、淤泥的物理力学性质、埋层深度、材料条件、公路等因素分别采取处理措施。
A computer program has been set up to simulate the formation process and final structure of AlN layer on the basis of the formation mechanism of AlN buried layer by ion implantation.
基于离子注入形成A1N埋层的机理,利用计算机程序动态模拟A 1n层的形成过程及终态结构。
Using the derived amplitude and phase expressions, the experimental data of the three-layer sample are fitted. The thickness of the buried layer in the sample is calculated.
用推导的振幅和位相表达式拟合三层样品的实验数据,并计算出中间层的厚度。