The DC charge based and ac based capacitance measurement technologies are analysised from the point of noise performance, which is the key factor to determine the resolution of measurement.
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
The principle of MOS capacitance measurement based on the method of high frequency detection is presented.
MOS结构高频C-V(电容-电压)特性测量是检测MOS器件制作工艺的重要手段。
From the point of view of capacitance measurement and image reconstruction, a set of suitable design parameters is found.
从电容测量和图象重建的角度出发,找到了一组合适的设计参数。
Introduce a relatively small typical capacitance measurement circuit and its basic principle, the use of digital signal processing technology to achieve small capacitance measurement method.