片语

dielectric breakdown detail电介质击穿

dielectric surface breakdown介质表面击穿

Dielectric Breakdown ModelDielectric breakdown model (DBM) is a macroscopic mathematical model combining the diffusion-limited aggregation model with electric field. It was developed by Niemeyer, Pietronero, and Weismann in 1984.

dielectric breakdown test绝缘哗试验

dielectric breakdown strength介质击穿强度

Dielectric Breakdown Testing介电击穿测试

gas dielectric breakdown气体介质击穿

interpoly dielectric breakdown voltage多晶硅间介质击穿电压

dielectric breakdown voltage电介质击穿电压

英汉例句

• the time dependent dielectric breakdown of tunneling oxide used for eeprom′s is investigated.

  阐述了应用于eeprom中的超薄隧道氧化层随时间的击穿特性。

• the process of dielectric breakdown in uneven electric field is analyzed and the influence of electrode polarity on gap breakdown is researched.

  文中分析了在极不均匀电场下间隙的击穿过程，并用试验研究了微细加工时电极极性对间隙击穿电压的影响。

• a state monitoring method of power cable based on the analysis of dielectric breakdown characteristic was presented.

  在对绝缘介质击穿特性分析的基础上提出了一种电力电缆状态监测方法。

• the exact determination of the breakdown voltage must therefore be attached to the measurement of an electrical value characteristic of the dielectric breakdown phenomenon.

  因此击穿电压的检测必须重视电介质击穿现象的电参数值的测量。

• the short-pulsed liquid dielectric breakdown characteristic is the basis of the application of pulse-power technique.

  快脉沖下液体绝缘介质击穿特性是脉沖功率技术应用的基础。

• the test results show that with decreasing the pressure, the time to dielectric breakdown increases, the inception voltage decreases.

  结果表明：随着气压的降低，环氧树脂板电极间起始放电电压减小，绝缘破坏时间延长；

• standard test method for dielectric breakdown voltage and dielectric strength of d149 astm solid electrical insulating materials at industrial power frequencies.

  astmd149固体电绝缘材料在工业电源频率下的介电击穿电压和介电强度的试验方法。

• a physical model of dielectric breakdown was presented in ic silicon dioxide films.

  提出了芯片门电路硅氧化层静电放电介质击穿的物理模型。

• time-dependent dielectric breakdown (tddb) is a major method to evaluate the quality of thin gate oxides.

  经时绝缘击穿（tddb）是评价薄栅氧化层质量的重要方法。

• based on analyses in line with the solid dielectric breakdown theory, it concluded that it takes a long time for a partial fault to develop gradually to the dielectric breakdown.

  通过固体电介质击穿理论的分析，提出由局部性缺陷发展逐渐导致介质击穿需要较长的发展时间。

• and proper content of nano-al2o3 could improve dielectric breakdown strength of these composites.

  适量纳米al2o3可以提高材料的电击穿强度。

• dielectric breakdown testing at voltages to 750 vac rms are also available.

  绝缘介质损坏的测试，使用电压最大750伏交流（vacrms）。

• in it the author points out: to understand laser dielectric breakdown of solids, we must know the interaction of laser radiation with solid plasmas.

  文章作者指出。「为了解固体电介质激光击穿，必须知道激光幅射与固体等离子体间的相互作用。」

• dielectric breakdown of bst thin films prepared by rf sputtering is studied in this paper.

  采用射频溅射制备bst薄膜，研究了薄膜的介电击穿特性。

• the time to dielectric breakdown under magnetic field depended on the relative angle between magnetic field and sample surface.

  磁场环境下的绝缘破坏时间依赖于磁力线与试样表面的相对夹角。