dopant
n. 掺杂物;搀杂剂
2025-09-07 00:24 浏览次数 8
n. 掺杂物;搀杂剂
1. an impurity added usually in minute amounts to a pure substance to alter its properties (such as conductivity)
dopant gases掺杂气体
amphoteric dopant两性掺杂剂
dopant redistribution掺杂剂再分布
implanted dopant注入杂质
dopant concentration掺杂浓度
chiral dopant手性掺杂剂
p dopant型掺杂剂
dopant activationDopant Activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. The term is often restricted to the application of thermal energy following the ion implantation of dopant
adulterant掺杂用的
Dopant B掺杂剂
the close correlations between laser energy density, pulse duration, interaction time and junction depth, dopant distribution as well as junction resistance are mainly emphasized in this paper.
着重强调了激光能量密度、脉沖宽度、作用时间等工艺参数与结深、杂质分布以及结电阻之间的密切关联。
for every dopant has its advantages and disadvantages, results of recent studies show that double-donor doping and donor-acceptor codoping can improve the performance of the material remarkably.
由于各掺杂物的优缺点不同,近几年研究发现,双施主掺杂和施受主共掺能够很好的改善材料的性能。
the flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth;
含掺杂物离子的气体的流量根据外延生长期间的线性斜 坡变化;
in reducing atmosphere, part v5+ can go into the lattice of barium titanate and act as an acceptor dopant by neutralizing free electron.
在还原气氛烧成的条件下,部分v5+可以进入钛酸钡晶格,起到受主掺杂的功效。
some results of the experiment and analysis on the behaviour of diamond and dopant at high pressure were reported.
报导了高压下金刚石和掺质物行为的若干实验和分析结果。
large size dopant could prolong the protection time of the coating.
采用大体积的掺杂离子能增加保护时间。
for the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the igbt and not from changes in the effective dopant density.
对于所研究的注量范围,所观察的效应是由于igbt少子寿命减少造成的,而不是由于有效掺杂浓度变化所致。
thermal processes, including the diffusion of oxygen and the redistribution of the dopant in the bonding interface, have been theoretically studied.
从理论上研究了键合过程中的热过程,如键合界面区中氧的扩散和杂质的再分布。
the rtp temperature, the rtp time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.
快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响,进而影响氧沉淀的形成。
the fluorescent stability of triarylpyrazoline oligomer as dopant is obviously higher than that of related small molecules, and its pled can emit pure blue light.
吡唑啉低聚物掺杂于高分子基质中具有明显高于相应小分子的荧光稳定性,并且其pled发出纯正的蓝光;
the results indicate that a hybrid profile of ri and dopant is the best choice for lma fiber with coiling.
研究结果表明:具有复合形状的折射率和掺杂离子分布可以有效提高弯曲条件下大模面积增益介质光纤的性能。
uses:as an activator of phosphor and dopant of garnet.
用途:用于荧光粉的活化剂和柘榴石的添加剂。
the fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms.
现代半导体集成电路的制造往往要求涉及大电流低能量带电搀杂 剂原子的注入步骤。
results showed that the basic physical properties and microstructure of recrystallized graphite with dopant zirconium was improved.
结果表明,掺杂锆使再结晶石墨的基本物理性能及其微晶结构有较大幅度的改善。
cyclic voltammetry experiment shows the titanium dopant obviously improves the reversibility of charge-discharge reaction.
循环伏安实验表明,掺钛明显改善充放电反应的可逆性。
the substrate is heated to a temperature greater than 950 deg c so as to cause substantial annealing of the dopant within the silicon carbon layer.
基板被加热至超过950℃的温度,以便引发硅碳层中掺杂物的实质退火。
the formation of oxygen precipitates not only had relation to point defects, but also the dopant atoms.
氧沉淀的形成与硅片中点缺陷、掺杂原子有密切关系。
the results showed: the sintering was improved because of the presence of the dopant .
结果表明:由于掺杂组分的存在,烧结情况得到了明显的改进。
dopant influence some properties of polyaniline such as configuration, heat stability, infrared emittance, microwave absorbing.
掺杂剂性质影响聚苯胺的结构、热稳定性、红外发射率、微波吸收等性能。
electron probe microanalyses and hall effect were used to measure the variations of ge dopant and its related donor and acceptor concentrations.
通过电子探针微区分析和霍尔效应法探测锗杂质及其相关施主和受主浓度的变化。
the quantitative relations of the energy and charge transfer between substrate molecular and dopant in doped organic thin films were investigated.
研究了掺杂有机薄膜发光中基质分子与掺杂分子间能量传递和电荷转移的定量关系。
the latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon. get the number wrong, and things will not work properly.
最新的晶体管尺寸非常小,在其通道中掺杂只要往硅中注入少量杂质原子,如果这个量掌握得不好,晶体管的正常运行就会受到影响。
the results show that bi dopant suppresses the concentrations of positron capture centers and low-valent oxygen ions.
研究表明,铋掺杂使得晶体中的正电子捕获中心和低价氧浓度下降;