therefore the dopant concentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此,用此法测量的外延层分布是实际载流子分布的一种较好的近似。
in addition, the absorption coefficients and the dopant concentration doped of these samples weren't the same for x-ray excitation, therefore, their light emission efficiencies were also different.