片语

drain cut off current漏极截止电流

drain current modeling开态电流模型

gate induced drain leakage current栅极感应漏极漏电流

drain current tester漏电流测试仪

High drain current大电流

drain saturation current饱和漏电流

Pulsed Drain Current脉沖的消耗电流

drain capacity current电容漏电流

Drain-current controling漏极电流控制

英汉例句

• the shift of drain current induced by same interface states density increases with the increase of channel do- ping density.

  沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。

• thus, since gain scales with drain current and power dissipation, a minimum drain current exists at which a mosfet oscillator amplifier element supplies adequate gain for oscillation.

  因增益与带漏电流和功耗成比例，一个最小漏电流会在mos场效应管振蕩放大器元件能够提供适当的增益用于振蕩的时候出现。

• as in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.

  就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。

• this waveform can be presented as a superposition of the following elements (fig. 22 and tab. 5). the superposition of all these elements results in a typical drain current shown in fig. 21.

  这个波形可以被看作是下列原理的叠加（图22和平台5）。全部这些波形的叠加整合结果变成图21所示的典型漏极电流。

• studies of the small and medium-sized enterprises and the drain current causes, and put forward countermeasures are now on the small and medium-sized enterprises and the vital significance.

  研究我国中小企业人才流失的现状状、原因，并有针对性的提出对策对现今的中小企业便有着重要意义。

• the drain current model is simplified by an average capacitance formula and a simple expression of channel average mobility with gate voltage.

  采用一个随栅压变化的平均电容公式，并用一个简单的解析表达式来描述沟道平均迁移率随栅压的变化关系。

• with a gate voltage around 2.5v (minimum), output power and drain current increases substantially.

  随着周围2.5v的栅极电压（最低），输出功率和漏电流增加了很多。

• the output power and drain current increase as the gate voltage increases.

  输出功率和漏电流增加的栅极电压的增加。

• but there are also some disadvantages, such as the reducing of drain current driving capability and the increasing of parasitic capacitance.

  但同时也有一些不足，如漏极驱动能力降低以及寄生电容增大的问题。

• the saturation drain current at each gate bias decreased while the gate to drain breakdown voltage increased remarkably with the (nh 4) 2s x treatment.

  处理后，器件各栅偏压下的源漏饱和电流降低了，栅漏击穿电压有了显着提高。