英汉例句

• the deflection system of an electron beam lithography tool is used to control deflection scanning of electron beam.

  电子束曝光机的偏转系统控制电子束偏转扫描。

• the projection electron beam lithography with angular limitation(pebl)is potentially one of the most attractive techniques for nano lithography in the21st century.

  具有角度限制的电子束投影曝光技术有可能成为21世纪最有潜力的纳米光刻技术之一。

• the electron beam lithography and its improvement are introduced also.

  同时还介绍了电子束光刻技术及其改进。

• electron beam lithography (ebl) is widely used for the fabrication of devices with sub-micron and nano-meter dimensions.

  电子束曝光机是目前微细加工领域极具前途的一种光刻手段，是纳米级图形加工的理想方式。

• a novel process combining the self-assembly technique with electron beam lithography and selective chemical deposition was proposed for patterned film preparation.

  本文提出了一种新颖的结合自组装技术和电子束直写曝光以及选择性化学沉积制备图案化薄膜方法。

• the composition, principle and working procedure of the application software of ebes-40a electron beam lithography system are introduced.

  本文简要地介绍了一种圆形电子束曝光机应用软件的结构、工作原理及工作过程；

• dy2001a electron beam lithography system (ebls) is developed as a practical miniature ebls.

  dy2001a型电子束曝光机是作为实用化的小型曝光系统而研制的。

• this paper introduces the development of electron beam lithography around the world and basic fundamentals of pattern generator.

  论文分析了国内外电子束曝光技术的发展和图形发生器的工作原理。

• the manufacture of high-line-density x-ray transmission gratings for x-ray spectroscopy by using electron beam lithography and x-ray lithography was reported.

  针对x射线透射光栅摄谱仪中的高线密度光栅，研究了采用电子束曝光和x射线曝光技术结合制作高线密度x射线透射光栅的工艺技术。

• electron beam lithography machine is the key instrument for mask making and research of nanometer device.

  电子束曝光技术是掩模版制作和纳米器件研究的主要手段。

• a conic primitive based intermediate pattern and its data format of electron beam lithography are defined.

  该数据格式的出现，为二次曲线单元图形在电子束曝光技术中的广泛应用奠定了良好的基础。

• furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.

  此外，用此方法提取的电子散射参数被成功地用于相同实验条件下的电子束临近效应校正。

• the fabrication methods of mpc include electron beam lithography with subsequent evaporation and lift-off, interference lithography with dry-etching technology etc.

  制备金属光子晶体方法包括：电子束刻蚀结合后续剥离法、激光干涉光刻结合干刻蚀技术等。

• the optical part can be done by applying electron beam lithography (ebl), inductively coupled plasma (icp) etching, and plasma-enhanced chemical vapor deposition (pecvd).

  利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；

• the internal proximity effect correction in the electron beam lithography based on the variation of the pattern shape was studied.

  针对三维曝光图形的结构特点，结合重复增量扫描方式，分别从水平和深度两个方向进行邻近效应校正。