片语

effective electron mobility有效电子迁移率

electron image amplifier mobility电子移动性

high electron mobility高电子迁移率

high electron mobility transistor高电子迁移率晶体管

high-electron-mobility transistors迁移率晶体管

electron Hall mobility电子霍耳迁移率

electron mobility tensor[等离子]

英汉例句

• and by the means of silicide , resist layer and aluminium multilayer metal lines , the questions of ohmic-contact and a1 electron mobility are resolved.

  采用硅化物阻挡层和a1多层金属布线方法，解决了欧姆接触和铝的电迁移问题。

• it is found that the mobility influences the carrier generation and transport simultaneously. there is an optimal value both for electron mobility and hole mobility.

  研究发现载流子迁移率同时影响光生电子-空穴对的解离和载流子的输运过程，电子和空穴的迁移率都有一个最佳值。

• high – electron mobility transistor?

  高电子活动性晶体管 hemt?。

• the model can be used to study and analyze influences of interface characteristics on electron mobility and is also a basis of circuit simulations in the future.

  应用此模型，既能有效方便地研究分析界面特性对电子迁移率的影响，又为将来的电路模拟打下了基础。

• double crystal x ray rocking curve showed good crystal quality of pseudomorphic high electron mobility transistor (phemt) structure grown on it.

  射线双晶摇摆曲线分析证明材料结构完整，晶体质量良好。

• the subject of the invention is to raise the two-dimensional electron density and electron mobility of high electron mobility transistor of gallium nitride without generating short channelling effect.

  其课题在于，针对氮化镓系的高电子迁移率晶体管，提高二维电子浓度和电子迁移率，并且不产生短沟道效应。

• the method can increase electron mobility between the startup state current and the channel area.

  此薄膜晶体管及薄膜晶体管的制造方法可增加开启状态电流与通道区的电子迁移率。

• the magnitude of electron mobility is indicative of the frequency of the events that free electrons, being acted on by an electric field, are scattered by imperfection in the crystal lattice.

  自由电子在电场的作用下，会由于晶体中的杂质而发生散射，迁移率就是指这种散射发生的频率。

• the improvements are attributed by the large increase in average electron mobility as well as in drift velocity at 77 k.

  作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高。

• for example, the hole mobility in pmos and the electron mobility in nmos can be significantly enhanced by introducing appropriate compressive and tensile channel stresses, respectively.

  例如，通过在沟道中引入适当的压应力和张应力能分别提高pmos的空穴迁移率和nmos的电子迁移率。

• the results show that at lower doping concentration, neutral impurity scattering has little influence on the electron mobility perpendicular to the principal c axis.

  结果表明：低温区，掺杂浓度较高时，中性杂质散射对电子霍耳迁移率影响很大； 高温区，电子霍耳迁移率则主要受谷间声子散射控制。

• high electron mobility transistors (hemt) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.

  高电子迁移率晶体管（hemt）是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。