according to the condition of electroneutrality, a general formula of fermi energy in one-doped semiconductor is deduced.
利用电中性条件,导出了掺单一杂质半导体费米能级的普适公式,在具体应用时可作相应简。
finally, according to the concept of quasi-heterojunction the fermi energy level pinning on the surface is discussed.
从準异质结的概念出发,讨论了表面费米能级钉扎现象。
in special application according to experimental condition , fermi energy that suit experimental condition are choosed together with deduction condition when applied.
在具体的实际应用中,根据自己的实验情况,结合推导条件,选择出适合自己实验条件的费米能级公式加以应用。
difference in extent of the fermi energy and decrease of band-gap energy for three kinds of cnts show that cnt with one end open is favorable for the preparation of field emission electrode.
三种不同结构的碳纳米管在费米能的增幅上有些差异,带宽减小的程度也是不同的,一端封闭的碳纳米管在f掺杂后费米能的增幅最大,说明在制备场发射电极时选择一端封闭的碳纳米管更加有利。
it is found that a reconstruction of the structure occurs with an increase ofthe imposed axial force, which alters the transmission function around the fermi energy and will reduce the current.
计算表明,在外加的轴向拉力下,碳管的几何结构会发生重构,这也会改变碳管的输运性质并减小体系的电导。
it is predicated that hallconductivity exhibit a sign reversal when the fermi energy sweeps over such a band-crossing.
分析表明,这些多余的反号跳跃来源于扶手椅形带能谱结构中的子带交叉点。