the simple methods are put forward to calculate fermi level and edge level of sulfide mineral by means of potential of mineral electrode and zeta potential of mineral surface.

提出采用矿物浮选常用参数，即矿物静电位和矿物颗粒表面动电位来计算硫化矿物的费米能级和边缘能级的简便方法。

with the two dimensional electron gas model, considering the nonlinear shift of fermi level with electron gas density, the dc output characteristics is calculated.

考虑费米能级随二维电子气浓度的变化，计算了器件的直流特性。

the electronic structure of conduction band near fermi level is changed markedly, especially for ni.

费米面附近导带的电子结构变化较大；

a fitting process is used to measure the cavity loss and the quasi fermi level separation for fabry pérot semiconductor lasers.

为了将半导体激光器应用于连续波腔衰蕩法腔损耗测量，设计了半导体激光器的驱动电路。

the optical relaxation is a process in which nonequilibrium electrons, excited by laser pulses and originating from near fermi level in cu ultrafine particles, return to the equilibrium state.

该现象是由薄膜中金属超微粒子内费米能级附近电子被飞秒激光脉沖激发所产生的非平衡态电子经历瞬态弛豫造成的。

with approximation of single dangling bond, the positions of fermi level and the electron densities have been calculated for two groups of amorphous semiconductors.

在荷电的悬挂键模型下，计算了各种情况下的费密能级和电子浓度。并对两类不同的非晶半导体作了详细的讨论。

the fermi level and conductivity have been recursively calculated under the electroneutrality condition, which are in fairly agreement with the experiment.

在电中性条件下，用迭代法求出费米能级与电导率，与实验结果吻合较好。

the result show that these topological defects are not only responsible for a change in nanotube diameter, but also for the electronic behavior in the vicinity to fermi level .

研究表明，这些五边形和七边形拓扑缺陷不仅改变碳管的直径，支配费米能级附近的电学行为，而且随着拓扑缺陷在碳管中分布和排列方式的不同，碳管电学性能也明显不同。

the local density of states at the fermi level increases with the adsorption of hydrogen molecules.

氢分子吸附后，费米能级处的局域态密度增加。

as the effect of external perturbation of swcnt rope, a pseudogap of about 0.1 ev at the fermi level appears, and it makes a deep valley in the transmission probability curve.

由于管束效应，在费米能级处出现了赝隙，并在透射概率曲线中造成陡峭的透射凹谷。

therefore, the position of fermi level of electron system in noble metal is the same as that in the bulk of semiconductor electrode.

光照下贵金属中的电子具有与半导体整体相同的费米能级。