英语释义

• a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field

片语

unipolar fet单极场效应晶体管

FET Driver驱动器

eGaN FET晶体管

fet oscillator场效应晶体管振蕩器

Reset Fet加到复位管

fet amplifier场效应晶体管放大器

fet input输入场效应晶体管

junction FET结型场效应管

英汉例句

• The oscillator consists of a FET amplifier and a independent dielectric resonator feedback construction.

  该振蕩器主要是由一个FET放大器及一个独立的介质谐振器反馈电路结构组成。

• Before the circuit design, simply introduce the basic theory about the FET upconverter and the harmonic balance.

  在进行电路分析之前，简单介绍了一些FET上变频器的基本理论和基本的关于谐波平衡法的理论。

• Combined with wide band current feedback amplifier, FET input circuit and programmable circuit, variable gain amplification circuit with high speed and high input impedance is designed.

  并以宽带电流反馈运算放大器为核心，辅以FET输入电路及程控电路构建了高速高输入阻抗可变增益放大电路。

• With the relay can be; but if you need to speed, you can use the transistor, FET and other switching elements to achieve PWM (pulse width modulation) speed.

  用继电器即可；但如果需要调速，可以使用三极管，场效应管等开关元件实现PWM（脉沖宽度调制）调速。

• Microwave integrated front end USES a high linearity FET VCO as a transmitting source and unequal Load 3db mixed loop mixer with single bridge.

  微波集成前端采用了高线性度FET压控振蕩器作发射源，采用高隔离度的单桥路不等负载三分贝混合环混频器。

• We developed a general large signal modeling software and extracted the power FET model parameters. The parameters are well coincide with simulated and measured large signal s parameters.

  用研制出的大信号建模软件提取了功率FET的大信号模型参数，并用该模型模拟和测量了器件大信号s参数，结果完全一致。

• The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.

  本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。

• Two design examples, the matching networks for the load with a resistance and a capacitance in parallel and for a MMIC FET amplifier are presented to illustrate the applications of this technique.

  文中给出了一个阻容并联负载匹配网络和一个微波单片集成电路FET放大器匹配网络的设计实例。

• Future and Emerging technologies (FET) : FET is the incubator and pathfinder for new ideas and themes for long-term research in information and communication technologies (ICT).

  未来与新兴技术(译者注：以下简称FET)：FET是一个新点子的孵化器和开创者，长期以信息和通信技术(译者注：以下简称ICT)为主题开展的研究。

• DNA sensor based on FET is researched.

  研究了基于场效应晶体管的DNA传感器。

• As we need only electrical power for FET switching on the carrier side, power supply system for carrier is basically not needed.

  只有载体侧FET(场效应晶体管)开关需要电源，载体本身基本上不需要电源。

• In order to meet with the requirements of high-speed, the source coupled FET logic (SCFL) is applied in all of the circuits.

  为了适应高速度的要求，所有电路全都采用源极耦合场效应管逻辑来实现。

• This book describes the principle of FET circuit analysis, it is rare good material!

  本书讲述了场效应管电路的原理分析，是不可多得的好教材！

• FET is funded under the EU「s Seventh Framework Programme (FP7).

  FET位列欧盟第七框架计划(FP7)之下。

• Current status and development trend of the microwave broad-band FET amplifiers are introduced, and the principle, features, and design methods of the major broad-band amplifiers are also described.

  本文介绍了当前微波fet宽带放大器发展概况和动向，概括说明目前一些主要宽带放大器的机理、特点和设计方法。

• The simplified real frequency technique is developed to the design of microwave integrated FET amplifiers with commensurate lines networks.

  将简化实频技术发展用于具有公度线匹配网络的微波集成FET多级放大器的设计。

• This FET transistor, used here as variable resistor it」s part of reaction circuit of IC2.

  这FET晶体管，这里用作可变电阻的电路ic2的反应的一部分。

• A sealed coaxial matched load at hot or cold condition used in the measurement of low-noise FET amplifier and millimeter wave mixer is described.

  本文介绍了一种密封式匹配负载，以及将它置于冷、热态作为一种噪声源在低噪声fet放大器及毫米波混频器测试中的应用。

• The radiochemical purity of FET and FPT injection was above 95%, and all quality parameters met the quality requirements of radiopharmaceuticals.

  FET和FPT注射液放化纯度大于95%，各质量控制指标符合放射性药物质量要求。

• This paper introduces the CAD techniques for the power MMIC. The main factors are the power FET large signal modeling, power MMIC design methodology and process oriented CAD.

  从功率FET大信号建模、功率MMIC设计方法以及CAD同工艺因素的结合等方面论述了功率单片电路的CAD应用技术。

• The present invention relates to one kind of FET with vertical channel structure and its preparation process.

  本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。