片语

gate dielectric hfo二氧化铪薄膜

gate dielectric materials栅极电介质材料

oxynitride gate dielectric对于使用氮氧化硅闸极介电层

Gate Dielectric Technology闸介极科技

gate dielectric layer栅极介电层

High K gate Dielectric电介质

k gate dielectric电介质

英汉例句

• the epitaxial thin film material is applied to the gate dielectric of the new generation integrated circuit field-effect tube.

  用来应用于新一代集成电路中场效应管的栅介质。

• following, forms dielectric layer on the base board, and the gate dielectric layer covers the gate electrode.

  接着，在基板上形成栅介电层，且栅介电层覆盖栅极。

• in an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate.

  实施例中，本方法包括在半导体衬底上形成栅极电介质层。

• the results presented are consistent with experimental data, whereas a new finding for an optimum nitrogen content in hfsion gate dielectric requires further experimental verifications.

  模拟得出栅极电流与实验结果符合，而得出的优化氮含量有待实验证实。

• forming floating grid of gap wall on side wall of dielectric gap wall and gate dielectric layer;

  形成一间隙壁浮置栅于该介电间隙壁的一侧壁，且该间隙壁浮置栅位于该栅极介电层之上；

• a new process for gate dielectric fabrication named in situ steam generation(issg)is reported.

  介绍了一种制作栅介质的新工艺——原位水汽生成工艺。

• a gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.

  栅电介质层和栅极形成在鳍 部的顶表面上、相对的侧壁上和鳍部内的凹陷的底部上和相对的侧壁 上。

• the method further includes forming a gate dielectric on a top surface and at least top portions of sidewalls of the fin;

  形成一栅极介电体于该鳍片的一上表面及至少该鳍片的侧壁的顶部；

• the gate dielectric layer is deposited using a plasma enhanced deposition with a gas mixture comprising a silicon and chlorine containing compound.

  门电介质沉积层使用气体包括一个芯片和含氯化合物的混合物等离子增强沉积。

• the reliability of strain silicon, gate dielectric and copper interconnection are discussed, and some new researches are presented.

  简介了应变硅材料、栅介质的工艺及铜互连的可靠性，并对新的研究方向做了介绍。

• sacrificial gate spacers are disposed on the sidewalls of the gate dielectric and gate electrode. cavities are etched into the substrate extending under the sacrificial gate spacers.

  牺牲栅电极间隔物设置在所述栅极电介质和所述栅电极的侧壁上，在所述衬底上蚀刻空腔，并且空腔在牺牲栅电极间隔物下方延伸。

• an interface layer is formed on the gate dielectric layer.

  在栅极电介质层上形成界面层。

• a gate dielectric layer insulates the gate electrode from the body region. the shield dielectric layer is formed such that it flares out and extends directly under the body region.

  以及将所述栅极与所述主体区隔离开的栅电介质层，其中所述保护电介质层向外张开并且直接在所述主体区之下延伸。