a gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.
栅电介质层和栅极形成在鳍 部的顶表面上、相对的侧壁上和鳍部内的凹陷的底部上和相对的侧壁 上。
following, forms dielectric layer on the base board, and the gate dielectric layer covers the gate electrode.
接着,在基板上形成栅介电层,且栅介电层覆盖栅极。
the gate dielectric layer is deposited using a plasma enhanced deposition with a gas mixture comprising a silicon and chlorine containing compound.
门电介质沉积层使用气体包括一个芯片和含氯化合物的混合物等离子增强沉积。
in an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate.
实施例中,本方法包括在半导体衬底上形成栅极电介质层。
a gate dielectric layer insulates the gate electrode from the body region. the shield dielectric layer is formed such that it flares out and extends directly under the body region.
以及将所述栅极与所述主体区隔离开的栅电介质层,其中所述保护电介质层向外张开并且直接在所述主体区之下延伸。