英语释义

1. an electrical junction between two different materials (such as semiconductors)

片语

heterojunction gate异结栅

heterojunction structure异质结结构

heterojunction detector[电子]

heterojunction laser异质结激光器

heterojunction double双异质接面

heterojunction target异质结靶

heterojunction interface异质结面

Heterojunction CMOS异质结CMOS

inorganic heterojunction无机异质结

英汉例句

• the invention has wide use value and application prospect in the field of the preparation technology of the nano heterojunction photocatalytic material.

  本发明在纳米结构异质结光催化材料的制备技术领域内具有广泛地实用价值和应用前景。

• insertion of cbp layer changed heterojunction property, and in turn influenced the characteristics of charge carrier recombination.

  同时，由于cbp层的加入改变了异质结的结构，对载流子在异质结附近的复合发光过程产生了影响。

• discloses a heterojunction silicon solar cell and its manufacturing method.

  公开了一种异质结硅太阳能电池及其制造方法。

• the invention provides a silicon heterojunction solar cells, which include: crystal si substrate;

  本发明提供一种异质结硅太阳能电池，其包括：晶体硅基板；

• this paper reviews two dimensional electron gas formed on the liquid helium surface, the semiconductor surface space charge layer and the compound semiconductor heterojunction interface.

  本文简要介绍了液氦表面、半导体表面空间电荷层和化合物半导体异质结界面的二维电子气。

• donghang yan. major: polymer physics and chemistry; research field: organic heterojunction transistors. dr.

  专业：高分子物理与化学，研究方向：有机异质结薄膜晶体管。

• the electrical and photovoltaic properties of the heterojunction were investigated by measuring current voltage(j v)and capacitance voltage(c-v) characteristics.

  通过测量其电流—电压j—v和电容—电压c—v特性，研究了其光伏效应及电学性能。

• these defects include dislocations, heterojunction layer twins, clouds, inclusions, and cracks.

  这些缺陷包括位错、异质结构夹层、双晶、云层、包裹体、开裂等。

• the invention discloses a solar cell having an integrated structure of plane-bulk heterojunction and a preparation method thereof, belonging to the technical field of solar cells.

  本发明公开了属于太阳能电池技术领域的一种平面-本体异质结集成结构太阳能电池及其制备方法。

• we designed and made a monolithic integrated negative resistance logic unit, which is composed of resonant tunneling diodes(rtd) and heterojunction bipolar transistors(hbt).

  设计并研制了共振隧穿二极管（rtd）与异质结双极晶体管（hbt）单片集成负阻逻辑单元。

• photovoltaic effect was improved when the heterojunction was annealed in n2 400℃, the photocurrent increased by two magnitudes than that of unannealed.

  通过改变退火温度，我们发现400℃退火能够很好的改善异质结的光电转换特性，光生电流比没有退火前的增加了2倍多；

• the invention discloses a heterojunction and photoelectrochemistry mixed solar cell structure which belongs to the technical field of the applications of solar cells and nano materials.

  本发明公开了一种属于太阳能电池和纳米材料应用技术领域的异质结和光电化学混合太阳能电池结构。

• the invention has the advantages that the heterojunction device acquired by the method has the characteristics of good rectification ratio and high current density.

  本发明的有益效果是：该方法获得的异质结器件具有很好的整流比、高电流密度的特点。

• this paper discussed an analytical method for determining the heterojunction bipolar transistors (hbts) equivalent circuit model.

  提出一种求解异质结双极晶体管（hbt）小信号等效电路模型的解析方法。

• depletion model selective doped heterojunction transistor is designed and fabricated.

  设计和研制了耗尽型选择性掺杂异质结晶体管。

• heterojunction has been widely used in communications, microelectronics and optoelectronics and other fields for its excellent electronic transport properties and optical properties.

  异质结因其优异的电子输运特性和光电性能而被广泛地应用在通信、微电子及光电子等领域。

• hemt is a kind of high speed semiconductor device that bases on the heterojunction modulation doping.

  高电子迁移率晶体管（hemt）是基于异质结调制掺杂发展起来的一种高频高速半导体器件。

• we carry out the following researches around the polymer bulk heterojunction solar cells.

  本论文围绕聚合物本体异质结型太阳能电池开展以下研究工作。

• t equivalent high frequency heterojunction bipolar transistor (hbt) noise model is reported.

  提出了一个t等效异质结双极晶体管高频噪声电路模型。

• i-v characteristics of the heterojunction bipolar transistor(hbt) are presented to account for self-heating effect of rf power hbt's.

  从器件i-v特性的角度，表征了射频功率异质结双极晶体管（hbt）的自加热效应。

• based on optical interference and carrier transport principle, we propose models of the organic polymer bulk heterojunction photovoltaic cells.

  研究了对复合体膜进行热处理，以及增加缓沖层等这些提高聚合物太阳能电池性能的重要途径。

• the heterojunction barrier controlled ballistic electron transistor-a novel three terminal semiconductor device which could be operated competently at millimeter wavelength frequency is proposed.

  本文提出一种能在毫米波很好工作的三端半导体器件—异质结势垒控制飞的电子晶体管（简称势垒飞越晶体管）。

• in the composite film heterojunction of the invention, interface stress transfer is more effective, thus having stronger magnetoelectric effect.

  本发明的复合薄膜异质结中界面应力传 递更加有效，具有较强的磁电效应。