nand flash
快闪记忆体;资料储存型闪存
2025-09-08 11:35 浏览次数 6
快闪记忆体;资料储存型闪存
MLC- NAND Flash原厂原装
hy nand flash新版固件研究最新进展
NAND Flash driverNANDFlash驱动
Nand Flash startupLinux系统
NAND Flash Boot发板上移植
NAND flash controllerNANDFlash控制器
iPod NAND Flash三星
M Nand Flash标配
nand flash offers higher capacities with significantly faster write and erase performance.
nand flash提供更大容量的同时实现快速的写擦性能。
the new plant will manufacture nand flash memory chips, which are widely used in a host of products including mp3 players, cellphones and digital cameras.
新工厂将制造nand闪存芯片,其广泛用于多种设备如mp3播放器、窝式移动电话、码相机等。
this paper introduces the structure and attributes of flash memory. and the digital camera system based on nand flash memory is then presented and described.
该文分析了目前常用的快闪存储器的结构和特性,在此基础上介绍了基于nand闪存的数码相机系统。
this is the second nand flash device in production at the 20-nm class, joining a 64-gbit 25-nm multi-layer cell nand flash from im flash technologies, according to ubm techinsights.
这是目前为止市面上第二款基于20nm级别制程的nand闪存芯片产品,另外一款则是imflash生产的64gbit密度的25nm制程产品。
pricing in the nand flash memory chip market has stayed firm this year thanks to strong demand from smartphone and tablet makers.
由于来自智能手机和平板电脑制造商的强劲需求,nand闪存芯片市场的价格今年保持坚挺。
then the programming process, which is the difference between nand flash and other storage media, is discussed. in the same time, the erase operation is also introduced.
讨论了nand flash的写操作过程,这种写操作的特点也是flash有别于其它存储介质的地方,同时也对nand flash的擦除操作做了介绍;
the jffs2 algorithm was designed for nand flash devices and also includes improved performance with compression.
jffs2算法专门为nand flash设备设计,并且改善压缩性能。
nor flash memory can typically be programmed a byte at a time, whereas nand flash memory must be programmed in multi-byte bursts (typically, 512 bytes).
norflash内存通常一次可以编写一个字节,而nand flash内存必须编写多个字节(通常为 512字节)。
toshiba, which holds around 35% of the world「s nand flash market, suffered a power outage in a key production facility in northern japan during the disaster.
东芝持有全世界nand闪存市场的35%的份额,在这次灾难中其位于日本北部一处关键生产设施遭遇了电力短缺。
nand flash also had a strong week thanks to improving demand.
nand闪存也因需求上涨而表现强势。
samsung tonight said it has started mass production of two variants of its 30 nanometer nand flash memory.
三星近日宣布将开始量产两款30nm制程nand闪存芯片产品 。
samsung and toshiba are the world」s two biggest nand flash suppliers by revenue, and are likely to be ipad suppliers.
按收入计算,三星和东芝是世界上最大的两家nand闪存供应商,它们可能是ipad的供应商。
apple was accused on late sunday by anonymous industry sources of 「bullying」 nand flash memory suppliers through its purchasing tactics.
上周日,有某匿名厂商指控苹果在nand闪存市场上「欺行霸市」,威逼闪存厂商 。
toshiba will continue to keep and maintain its nand flash fabs. there appears to be no change on that front.
不过闪存业务方面,东芝的战略则没有任何变化,他们仍将继续保留其名下的nand闪存芯片厂。
in march, the company announced that it is expecting lower gross margins within its nand flash memory business, which could put a dent in the bottom line.
在3月,英特尔公司曾宣布,公司nand闪存业务上的利润增长较低。
a drop in prices could also improve adoption of ssds and stabilize a slowing nand flash market, samsung’s elliott said.
固态硬盘的降价有利于市场上更快的接受其产品,且对于放缓的nand闪存市场也起到了稳定作用。
samsung is the world’s largest nand flash maker, so it is capable of increasing ssd volumes, unsworth said.
作为世界上最大的nand闪存芯片提供商,提高现阶段较少的固态硬盘出货量并不成问题。
last year, japan's toshiba started the construction of a new nand flash memory fab, dubbed fab 5, also a 300-mm plant. construction work is scheduled for completion in the spring of 2011.
去年,日本东芝公司开始了新nand闪存芯片厂fab5的建设工作,这间工厂同样也是300mm规格,该厂预计今年春季将竣工。
in a nor device, each block in the flash memory can be erased up to 100,000 times. nand flash memories can be erased up to one million times.
在nor设备中,flash内存中的每个块可被擦除 100,000次,而在nand flash内存中可达到一百万次。
using tlc architecture, manufacturers can produced cheaper nand flash chips and increase its capacity.
使用tlc的架构,制造商可以生产更便宜的nand闪存芯片,并提高其容量。
the design includes a 433mhz amd geode processor, 128mb of ram, 1gb of nand flash (instead of a hard disk), a 7 1/2-inch dual-mode lcd, wireless networking, and even a video camera.
这项设计包含一个433mhzamdgeode处理器、128mbram,1gbnand闪存(代替硬盘)、7.5英寸双模lcd、无线网络,至还有一个视频摄像机。
so the problem of the high recording speed with the invalid block of nand flash and data inverse is settled, the reliability of the system is improved.
从而解决了闪存存在无效块和数据翻转时时,系统的高速可靠存储问题,提高了系统的可靠性。