single crystal silicon
单晶硅
2026-03-22 09:39 浏览次数 33
单晶硅
single crystal silicon rod单晶硅棒
single-crystal silicon water硅单芯片
single crystal silicon substrate单晶硅基片
Single crystal silicon sphere标準硅球
single-crystal silicon electromagnetic chips单晶硅电磁片
single crystal silicon resistivity硅单晶电阻率
single crystal silicon film单晶硅薄膜
single crystal silicon wafer单晶硅薄片
this paper introduces the basic principle and process conditions of single crystal silicon growth by cz method.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
series of nickel-passivated porous silicon were fabricated by hydrothermally etching single crystal silicon wafers under different etching conditions.
利用水热技术制备了系列镍钝化多孔硅样品,并对其表面形貌和光致发光谱进行了研究。
an experiment of single crystal silicon edm have been carried out in this paper. experimental results show that edm is a effective machining method to single crystal silicon.
对单晶硅材料进行电火花加工工艺试验研究的结果表明,在一定的条件下,电火花加工工艺可成为单晶硅材料的一种较有效的加工方法。
in recent years, nitrogen behavior in single crystal silicon has been intensively studied.
近年来,硅中氮的行为被广泛深入地研究。
the drawing of single crystal silicon in a closed thermal system is described.
本文介绍采用密闭热系统拉晶工艺拉制硅单晶的情况。
a single crystal silicon was used for indentation hardness experiments and its hardness was obtained by the work-of-indentation method.
用压痕功法对单晶硅的压痕硬度进行了实验研究,并与其它方法进行了比较分析。
impact analysis of gaussian beam on measurement of single crystal silicon sphere diameter.
高斯光束对标準硅球直径测量的影响分析。
every series breed specification , high efficiency solar energy producing single crystal silicon , polycrystal silicon and amorphous silicon vanquish the large-scale module and chip only.
生产单晶硅、多晶硅和非晶硅各系列品种规格、高效率的太阳能光伏大型组件及微型组件。
select a soluble europium salt solution as the raw material, and deposit the thin film on the single crystal silicon wafer by utilizing a three-electrode electrochemical cell.
选择可溶性铕盐溶液为原料,利用三电极电化学池在单晶硅片上进行薄膜沉积。
epitaxial growth of lbd and laser on single crystal silicon film quartz substrate or single crystal silicon film quartz substrate deposited buffer layer.
半导体发光二极管结构有与石英衬底键合单晶硅薄膜;形成在石英衬底上的单晶硅电极层;
copper nanocrystallites were deposited on mechanically polished single crystal silicon (sc-si) wafers by electroless deposition method.
采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。
in the paper, experiments of surface strengthening process were made with single crystal silicon as electrode material and 45 steel as substrate material in kerosene on edm forming machine.
以单晶硅作电极,用电火花成形机在煤油介质中对45钢进行表面强化实验研究。
a method for manufacturing an ink-jet print head including: preparing a single crystal silicon wafer having a (110) crystal plane orientation, as a substrate;
一种制造喷墨打印头的方法,包括:準备具有(110)晶面取向的单晶硅晶片作为基板;
the diamond turning surface of single crystal silicon and germanium appears distribution feature alternate with brightness and darkness.
单晶硅、锗的超精密车削表面存在明暗相间的分布特征。
a double-deck plasma enhanced chemical vapor deposition (pecvd) facility was used to prepare silicon nitride film on the finely polished (100) plane ofp-type single crystal silicon wafer.
等离子增强型化学气相沉积(pecvd)氮化硅技术是目前半导体器件在合金化后低温生长氮化硅的唯一方法。
this paper introduces an optimized design method for multi layer optical films, which is used to design antireflection coatings for single crystal silicon solar cells used in space.
最优化设计方法是一种利用计算机进行辅助设计的方法,它在薄膜设计中具有明显的优越性。
a simple method to synthesize single crystal silicon nanowires(sinws)on the iron-deposided silicon substrate by a catalytic(0.
采用以硅衬底为硅源的简单方法,在蘸有一层催化剂(0。
a layer of europium oxide red light luminescent thin film is deposited on one side surface of a single crystal silicon substrate.
在单晶硅衬底的一 个侧面沉积有一层氧化铕红光发光薄膜。
this paper includes the following aspects:the first chapter introduces the current development of photovoltaic industry, particularly in the development of single crystal silicon solar cells.
论文主要包括以下几个方面:第一章首先介绍了光伏产业的发展状态,尤其是单晶硅太阳能电池的发展情况。
the utility model relates to a hollow shaft magnetic fluid sealing device of a non-locking device used for a single crystal silicon furnace and silicon chip furnace equipment.
本实用新型涉及一种用于单晶硅炉、硅芯炉设备的无锁紧装置的空心轴磁流体密封装置。
silicon dioxide etching processes with high selectivity to polysilicon and single crystal silicon are required to fabricate contact structures.
高选择性的二氧化硅对单晶硅及多晶硅的干法腐蚀工艺在半导体加工领域占有重要地位。