- the structure, fabrication technology and light emission properties of double barrier mimis tunneling junction are discussed. - 讨论了硅基双势垒金属绝缘层金属绝缘层半导体 (mimis)隧道发光结的结构、制备方法及发光特性。 
- tunneling magnetoresistance (tmr) discovered in magnetic tunneling junction (mtj) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new mram devices. - 磁性隧道结结构中发现的隧道磁电阻效应(tmr)灵敏度高、结电阻容易调整,在开发新型mram方面极具应用潜力。 
- we discuss the quantum characteristics of superconductor tunneling junction (sis) during its transition from zero voltage state to normal state. - 本文讨论了超导隧道结(sis)从零电压态跃迁到正常态过程的量子特征。