- tunneling magnetoresistance (tmr) discovered in magnetic tunneling junction (mtj) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new mram devices. - 磁性隧道结结构中发现的隧道磁电阻效应(tmr)灵敏度高、结电阻容易调整,在开发新型mram方面极具应用潜力。 
- the invention is applicable to giant magnetoresistance devices or tunneling magnetoresistance devices, such as magnetic sensors, magnetic random-access memorys and magnetic logic devices. - 本发明可用于巨磁电阻器件或隧穿磁电阻器件,比如磁性传感器、磁随机存储器和磁性逻辑器件等。 
- tunneling magnetoresistance (tmr) effect of mtj samples has been successfully studied. - 研究mtj样品的隧道结磁电阻(tmr)效应。