片语

Low Power Digital Transistor小功率数字晶体管

power module transistor功率组件晶体管

power r transistor功率晶体管

microwave power bipolar transistor微波功率双极晶体管

power darlington transistor功率达林顿复合管

Power VMOS TransistorVMOS大功率管

power bipolar transistor功率双极晶体管

highvoltage power bipolar transistor高反压双极晶体管

Power switch transistor功率开关晶体管

英汉例句

• because of microwave power transistor being worked mostly under pulsed condition, it is becoming more and more important to study the transient characteristics of devices.

  鑒于越来越多的领域要求微波功率管工作于脉沖应用状态，研究管子的瞬态温度特性就显得日益重要。

• the welding quality between the chip and the base of power transistor inspected by radiographic testing was described.

  介绍采用射线方法检测功率管芯片与基座之间的焊接质量。

• in a drive system of power transistor inverter-motor, not only can it be used in fine control of motor current waveform, phase, amplitude and frequency, but can also be used to sense, fault current.

  在大功率晶体管逆变器——电动机驱动系统中，它不但可用来对电动机电流的波形、相位、幅值和频率进行精细控制，而且能快速地检测出故障电流。

• ac-dc switching power converter is a circuit which takes power transistor as a switch to control on state and off state realizing ac to dc conversion.

  交流-直流（ac-dc）开关电源转换器是一种利用半导体功率器件作开关，通过控制开关的开通与关断，将交流电能转变成直流电能的电路。

• for a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as ptc, ctr thermistor, passive devices etc.

  长期以来，解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻，以及ptc，ctr热敏电阻等无源器件。

• in the test of breakdown voltage of power transistor with sipos passivation layer before packaging, an abnormal curve of breakdown voltage was found, which was a double-line breakdown voltage curve.

  测试半绝缘掺氧多晶硅（sipos）层钝化的功率晶体管管芯反向击穿电压曲线时，出现异常击穿曲线——「双线击穿」曲线现象。

• it will be a valuable reference to microwave pulse power transistor design.

  为微波脉沖功率晶体管的设计提供了育价值的参考。

• in order to switching the power transistor on or off quickly in dc/dc switching regulator, it is necessary to design a special output driver circuit.

  为使dc/dc开关电源的功率开关管及时地导通或截止，需要设计专用的输出驱动电路。

• the traditional methods for power transistor cant apply to power bare die due to various reasons such as high temperature and high operating currents.

  由于存在高温度、大电流等问题，传统的测试与老化筛选功率管的方法不能完全适用于功率裸芯片。

• with regard to solid-state microwave power transistor operating in class c, reducing the operation voltage is an efficient means to improve the transistor reliability.

  对于c类工作的固态微波功率管，降低工作电压是提高其可靠性的有效手段。

• this paper describes the unload circuits which are used in power transistor (soa). rcd unload circuit and a novel unload circuit without energy losses are presented, their effects are discussed.

  本文讨论了大功率晶体管在开关过程中的卸载问题，给出了rcd卸载电路及一种新颖的无损耗卸载电路，分析了卸载电路的工作过程。

• the basic program is that in the wiper circuit the power transistor and relay are connected in series to perform drive control.

  主要方案是，在刮水装置回路中串接功率三极管或继电器实行驱动控制。

• a method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.

  为了在试验周期中了解晶体管的结温，提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法。

• second breakdown mechanisms of bipolar power transistor is summarized.

  概述了双极功率晶体管二次击穿机理。

• this invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate.

  本发明公开一种半导体功率组件，其包括若干功率晶体管记忆胞，该记忆胞被开设于一半导体衬底中的沟槽所围绕。

• the principle of pam pwm compound control and the power transistor ac adjustable speed system based on that principle are presented in this paper.

  本文介绍pam、pwm复合控制原理和按此原理研制的大功率晶体管宽调速交流调速系统。

• step five: tune the final stage power transistor quiescent current, the current value of the power tube by measuring the voltage of the emitter resistance converter and get.

  第五步：调末级功率管的静态电流，该电流值可以经由过程测功率管的发射极电阻的电压换算而得到。

• one inherent limitation of the forward converter is that the transformer must be reset during the power transistor off period. thus, additional reset circuitry has to be used.

  但是它的一个固有缺陷是功率晶体管截止期间变压器必须磁复位，因而需要采用附加的复位电路。

• thermal failure of a type of microwave power transistor was analyzed and discussed, the power aging failure happened in the process of screening test.

  微波功率晶体管是微波功率放大器中的核心器件，其热性能在很大程度上决定于封装管芯的管壳。

• in this paper , the failure analysis of a type of high frequency power transistor is introduced .

  介绍了对某型号高频大功率晶体管进行的失效分析。

• equivalents between characteristics of power transistor are studied.

  研究了功率晶体管特性的等效关系；

• the maprst0912-50 is a 50wpk class c, silicon bipolar pulse power transistor designed specifically for driver stages in pulse power amplifier applications over the 960 to 1215 mhz bandwidth.

  maprst0912-50是一种峰值功率50瓦的硅双极性脉沖功率晶体管，专门设计用于960至1215mhz频带工作的脉沖功率放大器的前级。