a second embodiment of the inventive method for forming a semiconductor heterostructure comprises steps s1 to s3 and s5 of the first embodiment.
形成半导体异质结构的本发明方法的另一个实施方式包括第一个实施方式中的步骤s1~s3和s5。
the main factors affecting the quality of semiconductor heterostructure epitaxy chips, inspection methods and some typical test results have beeen introduced in this pater.