英语释义

1. any of several compounds of silicon and nitrogen specifically a compound Si3N4 that is a hard ceramic used in high-temperature applications and in composites

片语

silicon n nitride氮化硅

silicon oxygen nitride氧氮化硅

silicon rich nitride氮化硅

corundum silicon-nitride刚玉氮化硅

silicon oxygen nitride film非晶氮化硅薄膜

Silicon-nitride preceramics氮化硅陶瓷前驱体

silicon- nitride[无化] 氮化硅

complex silicon-nitride复合氮化硅

英汉例句

• silicon nitride is a kind of excellent ceramic material used in many areas.

  氮化硅是优良的陶瓷材料，应用十分广泛。

• silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition(rf-pecvd) technique.

  采用射频等离子体增强化学气相沉积法（rf-pecvd）在钢衬底上沉积氮化硅薄膜。

• lots of experiments indicate that the form, structure and properties of silicon nitride thin film prepared by pecvd are related to deposition parameters.

  大量的实验研究表明，pecvd氮化硅薄膜的组成、结构及其性能与沉积参数密切相关。

• sintering aids were one of key factors affecting microstructure and properties of silicon nitride ceramics.

  烧结助剂是影响氮化硅陶瓷的显微结构和性能的关键因素之一。

• a double-deck plasma enhanced chemical vapor deposition (pecvd) facility was used to prepare silicon nitride film on the finely polished (100) plane ofp-type single crystal silicon wafer.

  等离子增强型化学气相沉积（pecvd）氮化硅技术是目前半导体器件在合金化后低温生长氮化硅的唯一方法。

• the potential application of silicon nitride is widened because of its super performance. nitrogen content is up to 20%~39%.

  氮化硅由于其优良的性能，使它在许多领域得到应用并有许多潜在的用途。

• we have discovered that it is possible to tune the stress of a single-layer silicon nitride film by manipulating certain film deposition parameters.

  我们已经发现，可以通过操作某些膜沉积参数来调节单层氮化硅膜的应力。

• silicon nitride is a kind of excellent ceramic material.

  氮化硅是优良的陶瓷材料，应用广泛。

• the researchers placed a silicon nitride waveguide on a transparent nanoporous silicon oxide substrate that they specially developed to have a much lower refractive index than that of the waveguide.

  其做法是在纳米级氧化硅透明衬底上生长氮化硅波导，衬底的折射率远小于波导。

• the present invention relates to a method to prepare silicon nitride low-dimensional nano material array and pertains to the technical field of material preparation.

  本发明涉及一种氮化硅低维纳米材料阵列的制备方法，属于材料制备技术领域。

• creep of silicon nitride and its composites was reviewed. the effects of processing, additives and reinforcements on creep rate, creep mechanism and creep life prediction were discussed.

  本文评述了氮化硅及其复合材料的蠕变行为；讨论了材料加工工艺、添加剂和增强组元对蠕变速率的影响，以及蠕变机理和蠕变寿命预测方法．。

• as a kind of mufti- functional materials, silicon nitride thin film is widely used in many fields.

  氮化硅薄膜是一种多功能材料，在许多领域有着广泛的应用。

• creep of silicon nitride and its composites was reviewed.

  本文评述了氮化硅及其复合材料的蠕变行为；

• this paper presents the dielectric and mechanical properties of porous silicon nitride ceramics.

  本文介绍了多孔氮化硅陶瓷介电和机械性能。

• the principal mechanism of formation of silicon nitride layer on iron surface is described, and variety of production processes and influence factors are reviewed.

  综述了钢铁表面形成氮化硅薄膜的基本过程，各种制备方法、特点及影响因素。

• they create a series of pores ranging from 5 to 25 nm in diameter by placing flakes of graphene over a silicon nitride membrane and drilling nanosized holes in the graphene using an electron beam.

  通过将石墨烯薄片放置在一个氮化硅薄膜上，并用电子束在石墨烯上打出纳米尺度的孔，他们制作出了一系列从5到25nm直径的孔。

• a systematic study of doping rare earths into the silicon nitride bonded silicon carbide material had done. the results of x-ray diffraction and mechanics properties testing were obtained.

  对氮化硅结合碳化硅材料进行了掺入稀土的系统实验，并对产品进行了力学性能测试和x射线衍射测试。

• the effect of holding time on intergranular phase and mechanical property of gps silicon nitride ceramics was studied.

  研究了保温时间对气压烧结（gps）氮化硅陶瓷晶界相及力学性能的影响。

• silicon nitride ceramic is a kind of fairly good material for rolling bearings.

  氮化硅陶瓷是一种较好的滚动轴承材料。

• this paper reviews the progress in study on silicon nitride in recent years. the fabrication and future application of ceramic roller from self-reinforced silicon nitride are analyzed and recommended.

  介绍近年来氮化硅陶瓷的研究进展，分析、介绍采用自增韧氮化硅材料制备陶瓷轧辊的技术和应用前景。

• in the process of silicon nitride thin film prepared by pecvd, deposition parameters strongly influence the properties of silicon nitride thin film.

  在pecvd氮化硅薄膜的实验中，沉积参数在很大程度上影响乃至决定着氮化硅薄膜的性能。