片语

silicon substrate integrated circuits硅衬底集成电路

v groove silicon substrate型槽硅衬底

design of silicon substrate基板设计

silicon base硅衬底

silicon nitride substrate氮化硅层衬底

Silicon carbide substrate青华企业有限公司

single crystal silicon substrate单晶硅基片

silicon substrate loss硅衬底损耗

silicon on insulating substrate绝缘衬底上外延硅

silicon substrate ic s硅衬底集成电路

英汉例句

• through the technology of rf and dc reactive sputtering manufacture, h2s gas sensors have been developed on silicon substrate on which a heater made of pt were attached.

  通过交流和直流反应溅射，我们以硅基片（表面上有白金加热电极）为基底制作h_2s气敏元件。

• undoped and mn doped zinc silicate (zn 2sio 4) thin films on silicon substrate are prepared by solid phase reaction method.

  采用与硅集成工艺相兼容的固相反应方法在硅衬底上制备了未经掺杂及掺锰的硅酸锌薄膜。

• it was found that the composite films on the hydroxyl-terminated silicon substrate showed better tribological properties than potassium stearate films under relative lower sliding velocity.

  结果表明：在相对低速滑动条件下，在羟基化硅基底上制备的复合薄膜的摩擦磨损性能优于硬脂酸钾薄膜；

• optoelectronic integrated circuits (oeics) and photonic integrated circuits on silicon substrate will meet the needs of information transmission and processing in the future.

  硅基的光电子集成以及光集成将满足未来信息传输处理的要求。

• a novel miniature electric field sensor(efs)using a vibrating polyimide film constructed on the silicon substrate is introduced.

  设计并分析了一种新型的以硅为基底、聚酰亚胺为振动膜的微型电场传感器。

• silicon powder with different purity and particle dimensions can be melted by focused lights emitted from heating lamps, then silicon substrate with various length, width and thickness is formed.

  可以使用不同纯度、粒度的硅粉，经过光聚焦加热熔化，最后得到不同长度、宽度和厚度的颗粒硅带衬底材料。

• a simple method to synthesize single crystal silicon nanowires(sinws)on the iron-deposided silicon substrate by a catalytic(0.

  采用以硅衬底为硅源的简单方法，在蘸有一层催化剂（0。

• the results show that carbon nanotubes grown on porous silicon substrate are well aligned with uniform diameter and dispersed distribution.

  结果表明，以多孔硅为衬底生长的碳纳米管管径均匀且离散分布，定向性良好。

• diamond-like carbon(dlc) films are grown on silicon substrate by pulsed arc deposition. the films' optical properties, wear properties, hardness, anti-resistance and chemical stability are researched.

  利用脉沖电弧镀技术在硅基片上沉积类金刚石薄膜，研究薄膜的光谱特性、摩擦磨损特性、硬度、电阻率和稳定性。

• in this paper, the diamond films were grown on the c_(60)-coated silicon substrate by using hot-filament chemical vapor deposition technique. the diamond nucleation and growth were studied.

  采用热丝化学气相沉积法在覆盖c_（60）膜的硅基片上沉积金刚石膜，研究了金刚石膜的成核与生长。

• the experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition(cvd) system.

  利用微波等离子体化学气相沉积（cvd）设备，在硅基片上进行了金刚石薄膜的沉积实验。

• the monocrystalline silicon substrate with textured structure is fabricated by anisotropic etching for 40 min.

  采用各向异性腐蚀的方法制得了具有绒面结构的单晶硅衬底。

• for example, as shown in fig. 8a, an oxide layer 810 optionally is patterned on a silicon substrate 820.

  例如，如图8a所示，氧化层810选择性地在硅衬底820上形成图案。

• examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of mis transmission line.

  研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。

• the diamond films were synthesized on silicon substrate by hot filament chemical vapor de- position (hfcvd).

  利用热灯丝cvd法在硅衬底上合成出了金刚石膜。

• chemomechanical polishing(cmp)technology of silicon substrate inulsi is introduced in this paper.

  介绍了特大规模集成电路（ulsi）硅衬底的化学机械抛光工艺。