in addition, the alh 84001 magnetites exhibit epitaxial growth relationships with the host carbonate, and are therefore unlikely to have formed within the cells of bacteria (bradley et al. 1998).
此外,84001磁铁矿显示的外延生长特点与大量碳酸盐有关,因此,与细菌细胞内部形成的也可能有所不同。
modern advanced epitaxial growth technology has made the widely application of sige strained layer materials possible.
现代先进的外延技术使应变层锗硅材料的应用成为可能。
bst thin films sol gel technique epitaxial growth electrical properties.
标 签薄膜溶胶-凝胶工艺外延生长电性能。
in this work, sem and xrd were performed and the epitaxial growth mechanism was studied as well.
本研究对上述结果作了sem及xrd等表征,并对外延生长机理进行了探讨。
finally, several measurements for improving epitaxial growth technics are also put forward.
通过对外延生长过程的研究,提出了改进外延生长工艺的措施。
epitaxial growth of lbd and laser on single crystal silicon film quartz substrate or single crystal silicon film quartz substrate deposited buffer layer.
半导体发光二极管结构有与石英衬底键合单晶硅薄膜;形成在石英衬底上的单晶硅电极层;
three fabrication processes, including (i) wet etching, (ii) the selective epitaxial growth (seg) on silicon wafers, and (iii) using silicon on insulator (soi) wafers, were studied.
制备中先后尝试了普通硅片湿法腐蚀工艺、选择性外延工艺和利用soi材料制作三种路线方案。
based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.
本文根据实际测量结果,一叙述了半导体衬底制片质量对外延生长的影响。
a two-step epitaxial growth technique from low pressure to atmospheric pressure has been presented.
本文提出了低-常压两步外延生长技术。
experiments show that the epitaxial growth structure could be used in the preparation of apd devices.
测试结果表明,利用所采用的外延生长结构制备apd器件,具有可行性。
it also explains the epitaxial growth determined by the capital and labor input as well as the internal growth, and estimates the effect of the allocation of resources.
本文在解释由资本及劳动力投入所决定的外延式增长的基础上主要解释了内涵式增长:具体测算出了资源配置效应;
the epitaxial growth is not found between(ti, al)n coating and substrate.
涂层在硬质合金基体上无外延生长;