英语释义

1. the growth on a crystalline substrate of a crystalline substance that mimics the orientation of the substrate

片语

epitaxial transistor[电子] 外延型晶体管；晶膜电晶体

epitaxial collector外延集电极

epitaxial deposition[电子] 外延沉积

epitaxial growth[电子] 外延生长

epitaxial slice外延生长薄片

epitaxial region外延区域

epitaxial layer[电子] 外延层；外延生长膜

epitaxial band取向附生层

epitaxial blur取向附生膜

epitaxial body外延衬底

英汉例句

• this paper reports the design and experiments of the low noise uhf electronic tuner consisting of a low noise dual-gate fet and a high merit silicon epitaxial varactor.

  本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现uhf电子调谐器低噪声化的有关设计和实验结果。

• vapour epitaxial grown single-crystal diamond film on diamond surface was obtained by microwave reinforced chemical vapour deposition method, using hydrogen, aceton vapour as source of gas.

  用氢气、丙酮蒸汽为源气体，通过微波增强的化学气相沉积方法，实现了在金刚石表面气相外延生长单晶金刚石薄膜。

• it is indicated that the step potential on the surface of the epitaxial grounding grid meets the specialty standard as long as the depth of burying of the grid is reasonable.

  计算和实践表明，只要接地极埋设深度适宜，外延接地网表面的跨步电势仍然能够满足专业技术规范的安全要求。

• from the time-dependence of reflectivity at different temperature the solid phase epitaxial (spe) growth rate was calculated.

  从反射率随时间的变化曲线，计算出不同退火温度下的固相外延速率。

• for the parameter of the epitaxial layer, putting forward a series of measures that let up or repress deposition and self-doping when the epilayer processing, improve the epilayer quality.

  对于外延层必须达到的工艺参数，提出了一系列减小或抑制外延过程中扩散效应和自掺杂效应的工艺措施和方案，使外延层质量有了明显的提高；

• in this work, sem and xrd were performed and the epitaxial growth mechanism was studied as well.

  本研究对上述结果作了sem及xrd等表征，并对外延生长机理进行了探讨。

• there are three procedures in led production, namely epitaxial wafer, tube core and encapsulation.

  在led生产过程中，主要有外延片生长、芯片和封装三个环节。

• photoluminescence properties of epitaxial silicon implanted carbon after annealed in hydrogen and anodization are measured.

  研究了注碳外延硅经氢气退火及电化学腐蚀处理后的荧光特性。

• pnp epitaxial silicon transistor. low frequency power amplifier.

  pnp外延硅晶体管。低频功率放大器。

• the results obtained may be useful in understanding the migration effect of silicon in the epitaxial growth.

  所得结果可以用于认识硅外延生长过程中的硅迁移效应。

• the experimental results prove that the fall time of igbt increases when increasing the thickness of the epitaxial layer.

  实验结果证明igbt的下降时间随着外延层厚度的增加而增加。

• the formation of hard bubbles (including dumbbell domains) in epitaxial garnet films by using a series of pulse bias fields was investigated in some detail.

  实验研究了系列脉沖偏场作用下外延石榴石薄膜的硬磁泡（包括哑铃畴）的形成规律。

• the major aspects of the recent development in the growth, characterization and applications of the hetero epitaxial diamond films by chemical vapor deposition were reviewed.

  评论了国内外化学气相沉积的异质外延金刚石膜制备技术、性质表征以及应用和展望。

• the formation of hard bubbles by single-pulse bias field in epitaxial garnet films was investigated in some detail.

  实验研究了一次脉沖偏场作用下外延石榴石膜硬磁泡的形成规律。

• the temperature dependence of vbl group formation in stripe domain walls of epitaxial garnet bubble films was investigated by means of the method of single-pulse bias field.

  用一次脉沖偏场法研究了外延石榴石磁泡薄膜条状畴畴壁中vbl群体形成与温度的关系。

• based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.

  本文根据实际测量结果，一叙述了半导体衬底制片质量对外延生长的影响。

• epitaxial process and factors affecting property of the material were discussed.

  讨论了外延工艺和影响材料性质的因素。

• some ybco grains with micron size were kept by controlling the peritectic reaction, which acted as seed crystals of epitaxial growth.

  通过对包晶分解过程的控制，留下部分微米级ybco晶粒，并以此作为外延生长的种子。

• this superior reliability comes from advances in packaging techniques and epitaxial structure, together with the use of hard solder construction.

  这种超级可靠性来自于封装技术和外延结构的发展，也得益于硬焊接架构的使用。

• this model is very efficient for the mass production to get the matched ternary-alloy epitaxial layers.

  应用此模型在实际生产中可以迅速地得到匹配的多组分外延层。

• detailed analyses and descriptions are made on the epitaxial base technique and boron silicate glass self-aligned (bsa) bipolar technique.

  对外延基区双极技术，硼硅玻璃自对準双极技术等进行了详细的分析和叙述。

• in this paper, morphologies of poly crystal line diamond film and epitaxial single-crystal diamond film by microwave plasma cvd method were reported, the causes of these morphologies were analyzed.

  本文给出了微波等离子体化学气相沉积多晶金刚石薄膜及外延单晶金刚石薄膜的各种形貌，并对这些形貌的形成做了理论分析。

• theresults have shown that the technique is of great advantage to reduceautodoping and to improve the quality of epitaxial layers.

  结果表明，低一常压两步外延对减小自掺杂和保证外延层质量非常有利。

• the switching losses at 25℃ to 125℃ are compared between sonic and standard fast recovery epitaxial diodes (fred) using platinum or gold as lifetime killers.

  文章还比较了sonic二极管和用铂或金作为寿命抑制剂的标準快恢复外延二极管（fred）在25℃到125℃下的开关损耗。

• recent results with cbe show that cbe holds the potential as an important new epitaxial technique that goes beyond both mbe and mocvd.

  最近用化学束外延得到的结果表明cbe具有超过mbe和mocvd的潜力而成为一种非常重要的新的外延技术。

• the epitaxial growth is not found between(ti, al)n coating and substrate.

  涂层在硬质合金基体上无外延生长；