英语释义

• growing a crystal layer of one mineral on the crystal base of another mineral in such a manner that its crystalline orientation is the same as that of the substrate

片语

Epitaxy delta延边三角形

Formosa Epitaxy璨圆光电

regular epitaxy正外延

graphio epitaxy制图

liquid epitaxy液相外延

hetero epitaxy[电子] 异质外延；异质磊晶

Epitaxy wafer磊晶片

silicon epitaxy硅外延

英汉例句

• the design and technical points of a molecular beam epitaxy apparatus with metal-organic source were described.

  本文报道了金属有机源分子束外延设备的设计方案和技术特点。

• some double crystal rocking curves of photocathode epitaxy materials and substrates are measured by means of x-ray double crystal diffraction in the bonding process.

  用x射线双晶衍射仪测量了阴极和玻璃热粘结工艺过程中阴极材料外延层和衬底的双晶回摆曲线。

• in this paper is reported the design and the settlement of an experimental simulation system of molecular beam epitaxy applied to physics researches.

  本文报道了一台用于物理研究的分子束外延模拟实验装置的设计和调试。

• the laser molecular beam epitaxy (laser mbe) is a new growth method of the films and the superlattices based on the conventional mbe and the pulsed laser deposition (pld).

  激光分子束外延是在传统分子束外延和普通激光淀积技术基础上发展起来的一种最新制备薄膜和人工超晶格方法。

• ultra pure hydrogen (>6n) is a process gas necessary for silicon epitaxy in semiconductor industry.

  超纯氢气（大于6n）是半导体硅外延等工艺必备的工艺气体。

• gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.

  氮化镓是增长了等离子体辅助（111）和分子束外延（001）硅衬底上氮化硅缓沖层使用铪。

• all the procedure for epitaxy growth was controlled by a computer.

  外延生长工艺过程由计算机控制。

• using a new kind of liquid-phase epitaxy technology, v-channeled substrate inner stripe visible gaalas semiconductor laser with a large optical cavity is fabricated.

  采用一种新的液相外延工艺，研制出了具有大光胶结构的v型槽衬底内条形可见光发射半导体激光器。

• the epitaxy experiments are arranged to take advantage of the mathematical method of orthogonal process design.

  采用「正交设计」的数学方法安排外延试验，找到多层连续均匀生长的条件。

• these devices are fabricated utilizing molecular beam epitaxy manufacturing techniques and feature rugged construction and consistent electrical performance.

  这些设备是利用分子束外延制备的制造技术和坚固的结构和功能一致的电气性能。

• to satisfy the requirement for high performance infrared detector, a selective epitaxy schottky barrier diode of sige was realized based on high quality silicon device.

  为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。

• the thick soi films were prepared by simox technology and si epitaxy process.

  利用simox技术和硅外延工艺制备了厚膜soi材料。

• described is a method of purifying a quartz processing vessel used in the production of semiconductors and more particularly for epitaxy from the gaseous phase.

  描述的是一个凈化石英加工船用于外延在半导体生产和更特别是从气相方法。

• may 5, 2008...bcc research has released a report about the markets for chemical vapor deposition (cvd), ion implantation, and molecular beam epitaxy (mbe).

  bcc研究公司发布的报告预测了化学气相沉积(cvd)、离子注入和分子束外延系统(mbe)的未来市场。

• molecular-beam epitaxy and dynamic growth with long-range space and temporal correlations are analysed using scaling analysis approach.

  用直接标度分析方法研究了分子束外延生长和在长程时间、空间关联条件下的动力生长过程。

• the main factors affecting the quality of semiconductor heterostructure epitaxy chips, inspection methods and some typical test results have beeen introduced in this pater.

  本文介绍了影响半导体异质外延晶片质量的主要因素，检测方法，几个典型测试结果。

• since molecular beam epitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.

  自从分子束外延生长技术出现以来，半导体物理的研究获得许多惊人的突破。

• finally, some reference criteria for the quality inspection of epitaxy chip materials are given.

  最后给出了几个外延晶片材料质量评估的参照标準。

• the growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using.

  再略为详细地讨论液相外延生长过程，因为晶体生长是实现集成光路使用的必不可少的一个环节。

• epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

  外延沉积接着用以形成一外延层于该外延表面上。

• in this paper, an experimental apparatus for the low pressure epitaxy of silane is described.

  本文介绍了硅烷低压外延的实验装置。